SI3424DV-T1-GE3

Vgs(th) (Max) @ Id:	800mV @ 250µA (Min)
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.14W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	28 mOhm @ 6.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI3424DV-T1-GE3 Application Field and Working Principle

Transistors are one of the most widely used components in electronics. They are used for a wide range of applications, such as amplification, switching and logic control. An important breed of transistors, the FET (Field Effect Transistor), provides a number of advantages such as high input impedance, low noise and increased ruggedness. The FETs can be further classified, one of which is the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The MOSFETs can again be classified into a variety of subtypes such as single, double, enhancement and depletion. These devices are further subdivided according to the number of conductive layers present. One such device is the SI3424DV-T1-GE3. In this article, we will look into the application field and working principle of this device.The SI3424DV-T1-GE3 is a single-channel enhancement-mode, n-channel MOSFET. It is one of the most popular members from the family of low power MOSFETs and is ideal for applications that require low on-resistances with minimal required space. It is 100V rated and the maximum power dissipation of the device is 260mW. The gate to source threshold voltage is 0.8V and the drain current is rated at a maximum of 250mA. The inverse body diode has a maximum forward voltage rating of 0.8V and the maximum reverse-recovery time of the device is 5ns. The gate capacitance of the device is 8.5pF and the thermal resistance of the device is 420K/W. The drain-source on-resistance of the device is 1.3 ohms.The application field of the SI3424DV-T1-GE3 is fairly broad, due to its small size, low power requirement and wide variety of available packages. It is commonly used in cellular phones, computers, TVs and digital audio players for EMI/RFI filtering tasks. It is also used in automotive applications such as power distribution, engine control and airbag systems, as well as in AC/DC and DC/DC converters.The working principle of a MOSFET is quite simple and can be explained through the following steps. The MOSFET is made of a semiconductor material, usually silicon, in which impurities are introduced to generate the two electrodes. The two electrodes, namely the source and the drain are connected to two contacts, while the other two contacts are the controlled gate and the bulk contacts, which are the common ground. When a positive voltage is applied to the gate electrode, a conductive channel is created from source to drain, allowing the current to flow from source to drain. By simply adjusting the gate voltage, the current can be controlled.In conclusion, the SI3424DV-T1-GE3 is one of the most commonly used single channel enhancement-mode n-channel MOSFETs. It is ideal for applications that require a low on-resistance with minimal footprint. It is extensively used in a variety of consumer electronics, automotive and AC/DC and DC/DC converter applications owing to its small size, low power requirement and wide variety of available packages. The working principle of the MOSFET is simple and relies on applying a positive voltage to the gate electrode in order to create a conductive channel from source to drain, allowing the current to flow.

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