SI3457DV Discrete Semiconductor Products

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The SI3457DV is a single-channel, mono-polar power field effect transistor (FET). It is typically used in the high voltage, high current applications of variable frequency power converters, power factor corrections (PFCs), LED backlighting, home appliances, and many other applications. The SI3457DV is a reliable and robust power FET with outstanding performance.

The SI3457DV utilizes high voltage MOSFET technology which is characteristics of reduced resistance, low on-state voltage, low gate charge, low gate-to-drain capacitance, and an improved RDS(on) characteristic. Its internal structure incorporates an isolated gate design which controls the drain and source voltages differential, helps to enhance FET reliability, and ensures device stability under a wide range of operating conditions.

The working principle of the SI3457DV is simple but highly efficient. The internal structure consists of two metal oxide semiconductor (MOS) capacitors, usually referred to as the gate and drain, which control the voltage applied to the device. When a voltage is applied to the gate of the transistor, an electric field is created between the gate and the drain. As the electric field increases in strength, it causes electrons to move from the source to the drain, forming a conductive path for current to flow. When the desired current is reached, the electric field is reduced and the current flow reverts back to its original state.

The SI3457DV is suitable for a wide range of applications, including high voltage and high current SMPS, LED lighting, home appliances, and other electronic systems. It is available in a space-saving D-Pak package, making it ideal for use in high-density boards. The gate terminal allows for gate voltage control, enabling the device to adjust and limit the output current automatically to achieve optimum performance. Its high-speed switching characteristics and low gate charge ensures maximum efficiency, making it an excellent choice for high-performance applications.

In conclusion, the SI3457DV is a highly reliable and efficient single-channel, mono-polar power field effect transistor that is suitable for a variety of applications. It uses advanced MOSFET technology to offer superior performance, high power efficiency, and reduced component size. Its gate terminal allows for gate voltage control, enabling the device to adjust and limit the output current as needed. This makes the SI3457DV a great choice for various high-voltage, high current applications.

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