| Allicdata Part #: | SI3457CDV-T1-E3TR-ND |
| Manufacturer Part#: |
SI3457CDV-T1-E3 |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 30V 5.1A 6-TSOP |
| More Detail: | P-Channel 30V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface M... |
| DataSheet: | SI3457CDV-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.18000 |
| 10 +: | $ 0.17460 |
| 100 +: | $ 0.17100 |
| 1000 +: | $ 0.16740 |
| 10000 +: | $ 0.16200 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | 6-TSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 3W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 74 mOhm @ 4.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.1A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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SI3457CDV-T1-E3 Application Field and Working Principle
SI3457CDV-T1-E3 (hereinafter referred to as ‘the device’) is a type of field effect transistor N-channel enhancement mode enhancement factor type MOSFET, formulated and applied to automotive as well as industrial fields.
This type of transistor has excellent performance of low on-state resistance (RDS(on)). The device is normally-off type, it is advantageous of low power consumption and high efficiency yield.
In this article, we are going to mainly focus on two aspects of SI3457CDV-T1-E3, i.e. application field and working principle.
Application Field
SO3457CDV-T1-E3 is mainly applied to automotive and industrial fields. It can be used under normal working environment in applications like power switching, such as lighting controlling, power engine module, power control module, etc. It can also be applied to split frequency ac control and electronic regulating. Besides, it is applicable to many domestic electronic devices due to its perfect temperature and current property.
Working Principle
SI3457CDV-T1-E3 is N-channel enhancement mode enhancement factor type MOSFET. Its working principle is based on the principle of electrostatic attraction. The transistor can be seen as an electrically operated switch. It is activated when an elecrical potential is applied to its gate terminal, making the channel conductive. As current begins to flow between the source and the drain terminals, the one connected to the positive voltage (VOG) is called the source, while the one connected to the negative voltage (VDS) is called the drain.
The E-MOSFET works like a switch. In other words, it makes use of voltage as the controlling factor. When the gate voltage is turned on, current will be allowed to flow from drain to source, providing significant conduction. Conversely, when the gate voltage is turned off, the current flow will stop, as the gate and drain will be isolated. Thus, the transistor can be used as a switch.
It is also worth noting that due to the low on-state resistance, the device is able to work in a very low current drain mode, making it suitable for low power electronic regulation and power control applications.
Conclusion
To conclude, SI3457CDV-T1-E3 is a type of field effect transistor N-channel enhancement mode enhancement factor type MOSFET, formulated and applied to automotive as well as industrial fields. It has excellent performance of low on-state resistance (RDS(on)) and can be used as a switch. Therefore, it is applicable to many domestic electronic devices as well as power switching. This article focuses on the application field and working principle of SI3457CDV-T1-E3.
The specific data is subject to PDF, and the above content is for reference
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|---|
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SI3457CDV-T1-E3 Datasheet/PDF