Allicdata Part #: | SI3493DDV-T1-GE3TR-ND |
Manufacturer Part#: |
SI3493DDV-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CHANNEL 20V 8A 6TSOP |
More Detail: | P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TS... |
DataSheet: | SI3493DDV-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1825pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 7.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI3493DDV-T1-GE3 is a silicon-based semiconductor device that utilizes metal–oxide–semiconductor field-effect transistor (MOSFET) technology. It is a single-gate, unipolar n-channel enhancement mode device.
The SI3493DDV-T1-GE3 is suitable for a wide range of applications, such as radio-frequency (RF) power amplifiers, power switches, and other linear and switchmode power conversion and linear circuit applications. In an RF power amplifier, it is possible to implement a wide range of class-D topologies, including push-pull, bridge-tied-load, and single-ended amplification schemes.
This component can also be used in embedded systems as voltage-controlled MOSFET complete with all necessary driving circuitry. It provides high-current switching and optimization loading in small packages and can be easily integrated into existing systems or used as a stand-alone component.
The device is manufactured with a smaller footprint and less distortion than other solutions, resulting in higher power, efficiency, and integration. The device also features a low threshold voltage and high-power density.
The operating principle of the SI3493DDV-T1-GE3 is based on the movement of electric charges between two terminals (source and drain) through a channel of insulating material. This movement of charge is controlled by electric fields produced by an electric voltage applied to a third terminal (gate). The gate voltage is used to control the current between the source and drain terminals. By proper gate-voltage control, a MOSFET can be used as a switch, amplifier or other electronic function.
The SI3493DDV-T1-GE3 is designed to ensure the maximum safety and reliability of operation. Protective features include over-temperature protection, which protects the gate junction against thermal runaway; reverse polarity protection, which protects against reverse supply polarity; and over-current protection, which keeps the drain current within a safe range and prevents thermal effects.
The device utilizes advanced process technologies and proprietary materials to maximize performance and reliability. Quality control processes and stringent design practices comply with industry standards to ensure the highest quality products and long-term value for the customer.
The specific data is subject to PDF, and the above content is for reference
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