SI3434DV-T1-E3 Allicdata Electronics
Allicdata Part #:

SI3434DV-T1-E3TR-ND

Manufacturer Part#:

SI3434DV-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 4.6A 6-TSOP
More Detail: N-Channel 30V 4.6A (Ta) 1.14W (Ta) Surface Mount 6...
DataSheet: SI3434DV-T1-E3 datasheetSI3434DV-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 600mV @ 1mA (Min)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI3434DV-T1-E3 is a single-channel MOSFET driver with high- and low-side output channels. It is designed to drive n- and p-channel MOSFETs from 3.3- to 15-V supply and up to 20-V drain-to-source voltage, so as to be compatible with a wide range of automotive, industrial and medical applications. By providing fast and isolated control signals, it helps to extend the service life of a wide range of system peripherals and components.

Applications

The SI3434DV-T1-E3 is designed to drive a wide range of N-channel and P-channel MOSFETs, such as those used in automotive electronics, home appliance systems, industrial and medical equipment, etc. Specifically, it can be used for boosting and regulating energy levels, adjusting streetlighting, controlling motors, and performing load-shedding operations.

Moreover, the device can be used to suit various application performances, such as high-speed switching and over-current protection, automotive engine ignition systems, motor drive systems, power factor correction and dynamic voltage scaling, power switch protection, and fault protection systems.

Working Principle

The device works on the principle of basic MOSFET topology, where a gate voltage is applied to the N-channel and P-channel to switch these devices on and off. The operation of the device is dependent on the applied voltage and current. When a voltage is applied to the gate, a channel is formed between the source and drain, thus allowing current to flow. The device is designed to switch quickly, with response times as low as 1 to 2 microseconds and a switching frequency up to 500 kHz.

The SI3434DV-T1-E3 also has built-in protections, such as short-circuit, over-temperature, and reverse-current protections. The device also features an integrated fault-detection circuit, which informs the user of externally connected faults whenever they occur. Additionally, the device features adjustable pre-drivers and drivers for ideal gate control.

Conclusion

The SI3434DV-T1-E3 is an advanced single-channel MOSFET driver with high- and low-side output channels. It is suited for a wide range of automotive, industrial and medical applications, including streetlighting, motor drive systems, automotive engine ignition systems, power switch protection, and fault protection systems. Furthermore, built-in protections, such as short-circuit, over-temperature and reverse-current protections, extend the service life of the device and optimize the performance of the system.

The specific data is subject to PDF, and the above content is for reference

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