
Allicdata Part #: | SI3420A-TPMSTR-ND |
Manufacturer Part#: |
SI3420A-TP |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | MOSFET N-CH 20V 6A SOT-23 |
More Detail: | N-Channel 20V 6A 1.25W Surface Mount SOT-23 |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.10161 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 515pF @ 10V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI3420A-TP is a high-voltage, vertical N-channel, low-side power MOSFET that is designed for use in radio-frequency (RF) applications. It is one of a few MOSFETs that is capable of operating at voltages up to 700V and withstands high dV/dt without experience of avalanche. Unlike conventional MOSFETs, this device has a deep depletion structure, which allows for the trade-off of leakage current in exchange for higher voltage capability. It is capable of controlling high currents at high frequencies and can be used in applications such as switching converters and amplifiers.
The SI3420A-TP is a single MOSFET, meaning that it contains a single silicon body that acts as both a source and a drain. It is an enhancement-mode device, which means that it can be switched on and off by externally applied gate voltage, enabling the user to control the device based on the supply voltage and load current. The gate of the device can be held continuously in the on or off state, or maintained in the on or off state for a short period of time. The MOSFET has a built-in protection circuit designed to prevent gate-to-source overvoltage and drain-to-source short circuit. In addition, the device is designed to dissipate a low amount of power due to its low gate capacitance and on-resistance.
When used to switch high voltage, the SI3420A-TP requires a gate driver to supply the voltage needed to turn the FET on and off. This is mainly due to the high gate resistance of the device, which requires a relatively high voltage to drive it on and off. The gate driver includes an optocoupler which can help isolate the circuit from noise and transients. The gate driver circuits used with the SI3420A-TP typically include a MOSFET to drive the gate, a resistor to limit the current, and a capacitor to filter the noise.
The working principles of the SI3420A-TP are fairly simple. When the gate is off, no current flows from the drain to the source, so the device acts as an open. When the gate is on, current will flow through the channel, allowing current to flow from the drain to the source. In this way, the SI3420A-TP can be used as a switch, providing a fast and efficient way to control high voltages and currents at high frequencies. In addition, it can be used as an amplifier or a voltage regulator solution.
The SI3420A-TP has a wide range of application fields that include high frequency motor drivers, switching converters, high voltage DC-DC converters, automotive applications and power management applications for consumer electronics. These applications require high frequency operation and require robust functions that can survive long-term operation. The SI3420A-TP provides an ideal solution for these applications due to its high voltage, high dV/dt capability and high switching speed.
In conclusion, the SI3420A-TP is an ideal device for high voltage and high frequency operations. It is capable of controlling current at high frequencies and can be used in applications such as switching converters and amplifiers. The built-in protection circuit ensures that the gate and drain-source voltages are kept within safe levels, while the low gate capacitance and on-resistance provide excellent noise filtering and power dissipation. The device is capable of handling high frequencies and voltages and is suitable for a wide range of application fields, making it the perfect solution for any application that requires robust high voltage switching capabilities.
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