| Allicdata Part #: | SI3456CDV-T1-GE3-ND |
| Manufacturer Part#: |
SI3456CDV-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 7.7A 6TSOP |
| More Detail: | N-Channel 30V 7.7A (Tc) 2W (Ta), 3.3W (Tc) Surface... |
| DataSheet: |  SI3456CDV-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | TrenchFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 34 mOhm @ 6.1A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 15V |
| FET Feature: | -- |
| Power Dissipation (Max): | 2W (Ta), 3.3W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-TSOP |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Description
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The SI3456CDV-T1-GE3 isa single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)from Infineon (formerly from Siemens) that is typically used in low-voltage and high-power applications. As with all MOSFETs, the SI3456CDV-T1-GE3 has a threshold voltage, which is referring to the voltage necessary to trigger a change in the MOSFET’s gate-source voltage. In order to maximize the transistor’s performance, it is recommended to keep the gate-source voltage as close to the threshold voltage as possible. The SI3456CDV-T1-GE3 is a low-voltage, low-power transistor that can be used in a wide range of applications, including motor control, power management, motor and speed controls. As such, it is typically used as a power switch between two power supplies, or as an amplifier or in a voltage regulator. Because of its low-voltage and low-power design, the SI3456CDV-T1-GE3 has a low on-resistance, which results in a low gate to source capacitance, allowing it to switch off quickly and accurately. This makes it ideal for use in motor controls and other applications requiring fast and reliable switching. In addition to its low power, the SI3456CDV-T1-GE3 also has an input-bias current of only 0.5 μA, making it an ideal choice for applications that require very low power consumption. This low-power feature also reduces the device’s overall heat dissipation, making it more efficient. The working principle of the SI3456CDV-T1-GE3 is straight forward. Basically, the MOSFET’s gate-source voltage is activated when the gate voltage exceeds the threshold voltage. This allows the current to flow between the source and the drain, as well as between the gate and the source. The current flow is regulated by controlling the amount of voltage applied to the gate-source. In order to maintain the performance of the device, it is important to keep the temperature and voltage of the gate-source at optimal levels. If the temperatures become too high, the transistor’s efficiency and performance may be affected. Also, if the voltage is too high, then the MOSFET may be destroyed due to excessive current flowing through it. By monitoring these parameters, the overall performance and life of the device can be maintained. In conclusion, the SI3456CDV-T1-GE3 is a powerful, yet low-power and low-voltage transistor that can be used in a wide range of power management, motor control, and motor speed applications. Its low on-resistance and low gate-source capacitance allow it to switch off quickly and accurately, while its low-power input-bias current helps reduce overall power consumption and heat dissipation. By monitoring the temperature and voltage of the gate-source, the device can be kept at optimal performance levels and used in numerous applications.
The specific data is subject to PDF, and the above content is for reference
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