SI7252DP-T1-GE3

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The SI7252DP-T1-GE3 is a MOSFET array produced by Silicon Integrations. It is a self protected MOSFET array with Dual N-channel enhancement mode field effect. The device is built with silicon gate oxide field effect transistors and double diffused MOS (DMOS) technology. It uses an active current limitation circuitry for ESD protection. This device is especially suitable for applications where a high current switching capability is required, such as LED drivers, motor circuits, power supplies and other electronic equipment.

This device has a wide range of features including low R_DS(on), excellent thermal characteristics, low V_GS(threshold), excellent clamping capability and no V_GS(threshold) shift under temperature cycling. All of these features make the device an attractive choice for customers looking for reliability, cost effectiveness and power efficiency.

This device has a maximum load current of 25 Amps at a maximum on state resistance of 2.5 Ohms. It is designed to operate at voltages from -10 V to 10 V. The device is also rated for a reverse working voltage of -50 VDC. It has a total gate charge of 0.7 nC and a total gate-drain charge of 1.3 nC.

The main operating principle of the SI7252DP-T1-GE3 is based on the simple physics of transistors. A transistor is a three-terminal device, comprised of a source, gate and drain. When a voltage is applied to the gate, current can flow between the source and drain. The amount of current flowing through the source-drain channel depends on the voltage applied to the gate. This is referred to as ‘channel-controlled current flow’.

The SI7252DP-T1-GE3 is designed to be used in applications where a high current switching capability is required. It is ideal for LED drivers, motor circuits, power supplies and other electronic equipment. Its low on state resistance, low V_GS threshold, excellent clamping capability and thermal characteristics make it an ideal choice for applications where power efficiency and reliability are required.

In summary, the SI7252DP-T1-GE3 is an ideal choice for applications where a high current switching capability is required. Its features include low on-state resistance, low V_GS threshold and excellent thermal characteristics, making it an excellent choice for applications where cost effectiveness, power efficiency and reliability are required. The device is based on the basic physics of transistors, making it an easy device to understand and work with.

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