Allicdata Part #: | SI7288DP-T1-GE3CT-ND |
Manufacturer Part#: |
SI7288DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 40V 20A PPAK SO-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 20A 15.6W Surf... |
DataSheet: | SI7288DP-T1-GE3 Datasheet/PDF |
Quantity: | 144709 |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Base Part Number: | SI7288 |
Supplier Device Package: | PowerPAK® SO-8 Dual |
Package / Case: | PowerPAK® SO-8 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 15.6W |
Input Capacitance (Ciss) (Max) @ Vds: | 565pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 10A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Drain to Source Voltage (Vdss): | 40V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Cut Tape (CT) |
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The SI7288DP-T1-GE3 is a transistors in the FETs, MOSFETs - Arrays family. It is a low-voltage, high-speed, single driver, low-power and high-current output device. The device is suitable for driving high current loads, such as motors, solenoids and other inductive loads. It is also suitable for driving high frequency and high speed circuits. The device is designed to provide a high current, constant current output, and a low-voltage level, low-power operation.
The SI7288DP-T1-GE3 is a three-phase, full-wave bridge driver. It consists of nine FETs, three for each phase: N-type for one phase, P-type for the other two phases. The SI7288DP-T1-GE3 is a combination of FETs. Each FET has an n-channel and a p-channel MOSFET, which form a full-wave bridge. The N-channel and P-channel MOSFETs are connected in pairs and driven by the same gate signal.
The SI7288DP-T1-GE3 features a fast gate drive and high current capability. It is designed to provide a relatively high current output, with a low input voltage and power consumption. It features low input voltage, low current consumption, high-speed performance, and a high output current capability. The device also features a wide operating temperature range.
The SI7288DP-T1-GE3 is typically used in applications such as inverters, motor drivers, power-driven consumer electronics and other equipment that require low-voltage operation and high current levels. It is suitable for controlling brushless, DC and universal motors, solenoids, buzzers, speakers, relays and other types of inductive loads. It is also suitable for controlling power transistors such as IGBTs and MOSFETs.
The SI7288DP-T1-GE3 is a device that utilizes MOSFET technology to drive high current inductive loads. It consists of nine FETs, forming a full-wave bridge which is driven by a single gate signal. The device features low-voltage operation, low input current, fast gate drive, high current capability and a wide operating temperature range. It is used in applications such as inverters, motor drivers, power-driven consumer electronics and other equipment that require low-voltage operation and high current capacity.
The specific data is subject to PDF, and the above content is for reference
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