SI7236DP-T1-E3

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The SI7236DP-T1-E3 is an n-channel vertical DMOSFET array. It is a 6-channel, 16-pin device featuring a fast rise time, p-channel drain-source, and low on-resistance characteristics. It is designed to provide superior ESD protection and power switching in a wide array of electronic applications such as consumer electronics, office equipment, automotive, and industrial products. This device is particularly well suited for switches, load switches, polarity switches, and other logic functions.

The SI7236DP-T1-E3 operates with a built-in voltage-controlled gate driver allowing it to be used as a high-frequency switch. It requires a low operating voltage supply and has a maximum operating current of 50 mA. The device is offered in six different package options, including a wettable flank package.

The SI7236DP-T1-E3 features a P-channel MOSFET array with a source-drain configuration. The device has a fast rise time, low on-resistance and low reverse-recovery time. The P-channel MOSFETs have a maximum drain-source voltage of 650 V and are capable of switching currents of up to 50 mA. The SI7236DP-T1-E3 is capable of withstanding drain-source voltage transients of up to 500 V.

The application field of the SI7236DP-T1-E3 is wide, ranging from consumer electronics, office equipment, automotive and industrial products to high voltage power supplies and inverters. The device is useful in implementing circuit protection, load switching, polarity switching and other logic functions. It is also ideal for low-voltage power switching. The device can be used in automotive applications as a switch array, load switch, polarity switch, and as a logic device.

The working principle of the SI7236DP-T1-E3 is based on the P-channel MOSFET array integrated onto the device. A low-voltage gate voltage is applied to the controlling gate in order to change the threshold voltage of the drain-source channel, thus enabling or disabling the device. With the application of a low gate voltage, the MOSFETs are in an off-state, and with a high gate voltage they are in an on-state. When the gate voltage is adjusted, the device follows the voltage level with the needed drain-source resistance.

In conclusion, the SI7236DP-T1-E3 is a vertical DMOSFET array featuring a fast rise time, p-channel drain-source, and low on-resistance characteristics. It is capable of handling drain-source voltage transients of up to 500 V, currents of up to 50 mA, and operates with a low voltage supply. It is suitable for a wide variety of applications, ranging from consumer electronics and office equipment to automotive and industrial products. It can be used as a high-frequency switch and for implementing circuit protection, load switching, polarity switching and other logic functions. The device operates by applying a low-voltage gate voltage to the controlling gate, which changes the threshold voltage of the drain-source channel, thus enabling or disabling the device.

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