SI7270DP-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7270DP-T1-GE3 is a high-performance N-channel Mosfet array. This device is specifically designed for low drain-source on-resistance, fast switching, and good threshold voltage control. It is used in a wide range of applications such as motor control, power conversion and power electronic solutions, for high-current switching applications in automotive and industrial electronics. The SI7270DP-T1-GE3 is based on a vertical N-channel process for lower input capacitance, and improved reliability and lifetime.

This device\'s high power Mosfet array consists of two circularly-aligned N-channel Mosfets. The Mosfets are also usually referred to as ‘floating-body’ Mosfets and they are arranged so their gates are connected to their source electrodes. This arrangement allows the gates to be ‘floated’ in a high voltage environment. When a voltage is applied to the gate, the device can be biased into a conducting or non-conducting state. The SI7270DP-T1-GE3 is designed to switch quickly in order to provide a fast switching time for improved performance and efficiency.

The device is also designed to provide good threshold voltage control. This is achieved through its vertical N-channel process which has a lower input capacitance, giving less charging and discharging time. This reduces the off-to-on delay when the device is switched on and increases the switching speed. The vertical N-channel construction also allows for easier integration into larger designs, as the smaller input capacitance ensures that the overall device size can be reduced.

The SI7270DP-T1-GE3 has been designed to operate in the most demanding applications. Its low on-resistance ensures that it can handle high loads, while its fast switching speeds make it suitable for high-speed applications. This device is also very reliable, with a long shelf-life due to its vertical N-channel process. This makes it an ideal choice for automotive and industrial applications. The device can also be used for motor control, power conversion and power electronic solutions.

In conclusion, the SI7270DP-T1-GE3 is a high-performance N-channel Mosfet array that is designed for applications requiring low drain-source on-resistance, fast switching, and good threshold voltage control. It is suitable for automotive and industrial electronic applications due to its high power capability and fast switching. Its vertical N-channel process ensures that it has lower input capacitance, which makes it easier to integrate into larger circuits and allows for improved reliability and lifetime.

The specific data is subject to PDF, and the above content is for reference