SI7223DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7223DN-T1-GE3TR-ND

Manufacturer Part#:

SI7223DN-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET DUAL P-CHAN POWERPAK 1212
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 6A (Tc) 2.6W (...
DataSheet: SI7223DN-T1-GE3 datasheetSI7223DN-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET® Gen III
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 26.4 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Description

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The SI7223DN-T1-GE3 is a transistor array designed for a wide range of applications. A transistor array is a series of transistors connected together in a specific way. It is useful in various electronics applications such as amplifiers, digital logic circuits and other integrated circuit types.

The SI7223DN-T1-GE3 is a Field Effect Transistor (FET) array type. A FET is a type of transistor that has an insulated gate that can be used to control the current flow between its two terminals. FETs are commonly used to amplify small signals and switch logic signals in integrated circuits. FETs are also used in switching applications, such as relays, to control current flows.

The SI7223DN-T1-GE3 is a type of MOSFET array, which is a type of FET. MOSFETs have a much higher switching speed than bipolar junction transistors (BJTs) and can be used for high speed logic circuits and power amplifier design. The advantage of MOSFETs compared to BJTs is their higher gain and low power dissipation.

The SI7223DN-T1-GE3 is a 2-input N-Channel Enhancement Mode MOSFET Array. It is a 4-pin device that contains two FETs in a single package, which allows for increased reliability, reduced signal reflection and lower power/voltage requirements than single FETs. The SI7223DN-T1-GE3 works by applying a signal to a control terminal which turns on the FETs in the array. This signal turns on the FETs in such a way that the drain and source terminals of each FET are connected, allowing current to flow.

The SI7223DN-T1-GE3 is widely used in various areas such as mobile communication systems, modems, power switching, relay controls and automotive engine controllers. Its high gain and low power dissipation make it an ideal choice for high speed switching and signaling applications.

The SI7223DN-T1-GE3 has a wide range of features that make it an attractive solution for many applications. It has a low on-state voltage drop, low on-state resistance, and low reverse transfer capacitance. It also features a fast switching speed and a robust mechanical design. The SI7223DN-T1-GE3 is available in a variety of package styles such as TO-220, SOIC, PDIP and SOP.

In summary, the SI7223DN-T1-GE3 is an excellent choice for a wide range of applications. It is a MOSFET array type which is characterized by high gain, low power dissipation and low on-state voltage drop. It is widely used in various areas such as mobile communication systems, modems, power switching, rechargeable battery management and automotive engine control. Its wide range of features, robust mechanical design and available packages make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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