SI7212DN-T1-GE3

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The SI7212DN-T1-GE3 is a member of the SI72xx family of dual MOSFET arrays developed by Siliconix Incorporated. It is a low voltage, low profile, low gate charge, dual-N-channel MOSFET array. The SI7212DN-T1-GE3 is designed to reduce board size, lower power loss and achieve best-in-class RDSON performance.

Application Field

The SI7212DN-T1-GE3 application field is extensive, since it covers a broad spectrum of consumer, automotive, and industrial applications. The varieties of potential applications include line drivers/receivers, power supplies, audio/video signal switches, and communications equipment. The dual N-channel MOSFETs in the SI7212DN-T1-GE3 can be utilized in applications such as power conversion, motor control, gate drivers, and hot swap, just to name a few.

The SI7212DN-T1-GE3 is particularly beneficial to engineers working on bus interfaces that require a low power consumption design and a low drain voltage. It is also a popular choice for high-speed circuits, GPS/LTE clocking applications, DC/DC regulation, and power distribution applications.

Working Principle

The SI7212DN-T1-GE3 utilizes dual N-channel MOSFET devices in an array. The dual MOSFETs are housed in a low profile flat packaging for efficient heat dissipation and low board-level impedance. The device is designed to provide exceptional RDSON performance, with each MOSFET capable of delivering 5.9 mOhms at a gate source voltage of 5V. The drain-source on-resistance is minimized, ensuring that less power is dissipated by the MOSFET array.

The SI7212DN-T1-GE3 utilizes a multi-finger, fully-stacked process for extreme current-handling capability, with each MOSFET capable of driving up to 9A. The low on-resistance and high current handling capability of the SI7212DN-T1-GE3 makes it ideal for applications requiring high efficiency, low power consumption, and high throughput.

In addition to its low on-state and gate charge characteristics, the SI7212DN-T1-GE3 is designed for extreme temperature and humidity conditions. The device offers a wide range of operating temperature and thermal performance, making it suitable for applications in hazardous environments. The low capacitance and RDSON performance also make the SI7212DN-T1-GE3 a great choice for RF applications.

The SI7212DN-T1-GE3 is also equipped with ESD protection and latch-up immunity, which helps ensure maximum system protection in extreme conditions. This makes it an ideal choice for mission-critical applications. In addition, the SI7212DN-T1-GE3 is RoHS compliant and lead-free, making it the perfect choice for designers looking for a reliable, green, and efficient device.

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