SIHB10N40D-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MOSFET has become one of the most popular transistors used in various applications. The SIHB10N40D-GE3 is one such example, a dependable, efficient component designed for a sequence of applications that require high switching speeds. This article will discuss the SIHB10N40D-GE3 application field and working principle.

The SIHB10N40D-GE3 is a N-channel enhancement-mode power MOSFET. Its features include a 4V gate-source threshold voltage and an off-state drain-source voltage (VDSS) of 400V, with a drain current (ID) of 16A. It also offers a 175-degree Celsius maximum junction temperature and a maximum avalanche energy (EAS) of 27mJ.

The range of MOSFETs available facilitates efficient switching and reduces energy losses in a variety of power electronic applications. It has been widely used in telecommunication equipment, automotive electronics, uninterruptible power supplies, home appliances, and portable Electronics, among many other uses.

The SIHB10N40D-GE3 has wide appeal because of its ability to offer excellent performance in various applications. It features an effective integration of circuit protection and high-speed performance, without any compromise in reliability or safety. This makes it a very popular and reliable option for demanding applications, such as welding equipment and industrial machinery.

The SIHB10N40D-GE3 is manufactured using power MOSFETs with a low on-state-resistance (RDS(on)). This contributes to its overall efficiency and performance. The low RDS(on) helps to minimize losses, thus allowing for higher-current operation with reduced heat dissipation. This provides a beneficial advantage when compared to traditional components.

The SIHB10N40D-GE3 comes with added flexibility in its design, thanks to its integrated process technology. This allows it to offer increased switching speeds with safety and reliability. In addition, its feature-rich construction facilitates better circuit protection, which is further enhanced by its advanced operation.

The working principle of the SIHB10N40D-GE3 is fairly simple. In operation, an electric field is created between the gate and the source of the device. As the gate-source voltage increases, the channel of the MOSFET is turned on and a current flows. The current is determined by the gate-source voltage (VGS) and the drain-source voltage (VDS).

The gate-source voltage (VGS) required to turn on the MOSFET is relatively high, as compared to other types of transistors. This means that the MOSFET can switch on and off quickly and reliably, without jeopardizing the safety of the circuit.

The SIHB10N40D-GE3 MOSFET is a versatile, efficient and reliable component. With its wide range of applications, it ensures a dependable performance in high-current applications that require high switching speeds. Its advanced process technology allows for excellent circuit protection and robust operation. Additionally, its feature-rich construction contributes to improved efficiency, reduced power losses and lower heat dissipation. With all these benefits, the SIHB10N40D-GE3 is a highly sought after device for various power electronic applications.

The specific data is subject to PDF, and the above content is for reference