SIHB8N50D-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHB8N50D-GE3 is a single-disc, high-speed N-channel Power MOSFET, with superior performance and excellent maximum current/voltage ratings. It is a suitable choice for any application that requires low power dissipation in switching applications such as switched-mode power supplies (SMPS) and battery chargers. In addition, it can also be used in other applications such as wireless communications and motor control.

The SIHB8N50D-GE3 is a three-terminal device, with a drain, gate, and source. The gate terminal is used to control current flow between the drain and source. It is an enhancement-mode device, which means that when the gate voltage is lower than the substrate voltage, no current flows through the drain and source terminals. This device is also an enhancement-type transistor, which means that it is designed to switch on by applying a suitable external electric field.

The SIHB8N50D-GE3 is rated for a maximum voltage of 500 volts, a maximum source-drain current of 8 amps, and a maximum power dissipation rating of up to 160 watts. These ratings make it suitable for applications in welding, automotive, communications and other industrial applications where greater power dissipation is required. Additionally, the device has many features such as an impressive avalanche capability, low on-resistance, fast switching speed, and low gate charge that makes it suitable for high-frequency applications.

The SIHB8N50D-GE3 is particularly suited for switching applications. It operates quickly, with a high maximum gate threshold voltage and a high gain-bandwidth ratio. Because of its fast switching speed, it can be used for high-frequency applications, such as those in RF circuits. It also has excellent thermal performance, so it is well-suited for high-power applications and for warmer environments, such as in motor controllers.

The SIHB8N50D-GE3 is also a very reliable device that can handle a high-frequency switching load. It is designed to provide a reliable connection between its drain and source, even in situations where a high voltage may be applied to the gate terminal. The device is suitable for both high and low duty cycle applications, making it well-suited for automotive applications. Its low gate charge means that the device can be switched frequently without compromising its performance or reliability.

The SIHB8N50D-GE3 is a great choice for a variety of applications, including those in automotive, communications, and industrial settings. Its combination of fast switching speed, excellent thermal performance, and reliability make it a great choice for high-power, high-frequency applications. Its impressive avalanche capability and low gate charge ensure that it can be used in applications where reliability and low power dissipation are key.

The specific data is subject to PDF, and the above content is for reference