SIHB18N60E-GE3

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The SIHB18N60E-GE3 is a high voltage ,high speed vertical power MOSFET rated at 600V. It is manufactured using a high cell density trench process. This MOSFET is suitable for high frequency converters and other high-temperature applications. It is capable of operation at temperatures up to 175 co and can provide very low gate charge and low on-resistance. The SIHB18N60E-GE3 has an integrated body diode that provides high avalanche immunity and protects the device during switching. It also has a high level of noise immunity for improved reliability.

Applications

The SIHB18N60E-GE3 is designed for use in motor control inverters, high voltage DC-DC converters, UPS systems and HID lighting applications. It is an ideal solution for motor drives in which high speed switching is required, such as permanent magnet motor drives, induction motor drives and brushless DC motor drives. It can also be used for switching high power DC-DC converter applications, such as DC-DC converters for sever power supplies, telecom power supplies and industrial power supplies.

Working Principle

The SIHB18N60E-GE3 is a vertical power MOSFET that operates with a gate-source voltage (VGSS) of -20V to 600V and a drain current of -30A. Its maximum drain-source on-state resistance (RDSon) is 18 mOhms at 10V. It is made using a high cell density trench process, enabling high speed switching and low gate charge. This results in the device being able to provide high power savings in many applications. To turn on the device, a positive voltage is applied to the gate terminal and the gate is then used to control the source-drain current. The device can then be switched off by applying a negative voltage to the gate terminal.

The device also features integrated body diode, which allows for reverse bias protection, fast turn-on and avalanche immunity. The body diode is activated when a negative voltage is applied to the gate and provides a low forward voltage drop when conducting in the forward direction. This results in improved efficiency and power savings.

Conclusion

The SIHB18N60E-GE3 is a high voltage, high speed vertical power MOSFET rated at 600V. It has an integrated body diode that provides high avalanche immunity and protects the device during switching. The device has a low gate charge, low on-resistance and high switching speed. It is ideal for motor control inverters, high voltage DC-DC converters, UPS systems and HID lighting applications. It is capable of operating at temperatures up to 175 co, providing improved reliability and efficiency.

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