SIHB12N65E-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHB12N65E-GE3 is a high-current, high-voltage, fast switching device in the form of a metal–oxide–semiconductor field-effect transistor (MOSFET). This type of device is used to switch electricity and can be used in a variety of applications, from automotive and industrial to consumer products.

A MOSFET is an insulated gate field-effect transistor (IGFET) formed by combining two alternatively-doped layers of semiconductor material, usually silicon. It is created by adding an insulating layer of silicon dioxide between these two oppositely-doped layers. When the insulating layer is thin enough, electrons can flow across it – this allows for current to move in either direction between the two layers.

This type of device is a three-terminal switching device, meaning it has three terminals called the gate, drain and source. The gate is the controlling terminal, which when triggered will allow electrons to move from the source to the drain. This is how the device controls the flow of electricity.

The SIHB12N65E-GE3 is particularly well-suited to switching high current, because it has a large breakdown voltage of 650V, a large drain-source on-resistance of 0.19 Ohm and a low gate charge of 105nC. These characteristics make it ideal for applications such as DC-DC conversion, motor control and lighting fixtures.

MOSFETs are also used in switching applications such as amplifiers, lightning controllers and audio applications, because of their efficiency and speed. They are also used in analog applications such as Analog-to-Digital and Digital-to-Analog converters.

MOSFETs have become increasingly popular because of their power efficiency, low capacitance and low on-resistance. This makes them a better alternative to bipolar transistors and other power switching devices. Their low-voltage operation also means that they can be used in applications where space is limited, and they consume less power than other types of power switching devices.

The SIHB12N65E-GE3 has a very low on-resistance, which allows it to handle very high current levels. This, coupled with its fast switching speed, makes it an ideal choice for applications where power losses need to be minimized. It is also suitable for use in high-current circuits, where it is important to control the voltage and current levels.

The SIHB12N65E-GE3, due to its high-current capabilities, is also well-suited to a variety of applications, such as motor control, lighting fixtures, DC-DC conversion and audio applications. It is also widely used in consumer products and automotive applications. The device is widely available, making it an attractive choice for engineers and designers looking for an efficient, low-cost switching solution.

The specific data is subject to PDF, and the above content is for reference