SIHB30N60AEL-GE3

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The SIHB30N60AEL-GE3 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high performance, high switching frequency applications. This device utilizes a lateral DMOS (Depletion Mode MOSFET) structure, which makes it capable of a low on-state resistance and provide precision current handling capabilities. This MOSFET can handle high frequency switching applications and features a very low input capacitance and an output with low noises. Due to its low on-resistance, it can produce small amounts of power dissipation and minimize conduction losses.

The SIHB30N60AEL-GE3 is ideal for use in high speed, high frequency applications where low on-state resistance is important. It can be used for high power switching applications such as motor control, power converters, and DC-DC converters. Additionally, this device can be used for high voltage switching for power supply designs, as well as for power management applications. The short switching times and low input capacitance of the device make it well-suited for use in high-speed switching applications.

The SIHB30N60AEL-GE3 works on a principle having two terminals, the drain and the source. The gate is used to control the conduction of the circuit. When a voltage is applied to the gate, it changes the width of a conducting channel between the source and drain terminals. When the gate voltage is increased, the channel width increases and allows more electrical current to flow through the channel. When the gate voltage is decreased, the channel width decreases and the drain current decreases.

The SIHB30N60AEL-GE3 has a maximum durability rating of 275A and can operate at up to 30V with a maximum on-state resistance of 0.0060 ohm. It is available in a RoHS compliant package and is rated for a wide operating temperature range of -55°C to 150°C, making it suitable for use in wide variety of applications. The short switching times and low input capacitance make it well-suited for use in high-speed switching applications.

The SIHB30N60AEL-GE3 is a device designed for use in high performance, power management applications. With its low on-state resistance and wide operating temperature range, it is an ideal choice for high power switching applications. Additionally, its short switching times and low input capacitance make it well-suited for use in high-speed switching applications. With its wide variety of features and long life span, the SIHB30N60AEL-GE3 is a great choice for use in a variety of applications.

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