SIHB22N60S-GE3

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The SIHB22N60S-GE3 is a MOSFET that delivers best-in-class power performance in a skinless shielded package. It features a low-capacitance fast switching technology for improved efficiency and lower power loss. The device is available in a common-cathode configuration with a very low RDS(on) value, ensuring excellent efficiency at high-current applications.

Application field

The SIHB22N60S-GE3 is mainly used as an efficient power switch in power conversion circuits. It is suitable for a wide range of applications such as switching power supplies, DC/DC converters, AC/DC converters, uninterruptible power supplies (UPS), motor drives, electric vehicle invertors and other related applications.

Working Principle

The SIHB22N60S-GE3 is a N-Channel MOSFET that uses a FET\'s voltage-controlled current flow behavior. In this device, the flowing current is controlled by the gate-source voltage (Vgs). When Vgs is greater than a certain threshold voltage, the channel conducting electrons create a channel between the gate and the drain, allowing current flow from the source to the drain. The gate-source voltage can be applied through a MOSFET driver in order to control the conduction of the switching device.

The SIHB22N60S-GE3 features a high-speed and low drive current for improved switching efficiency, low capacitance for reduced power loss, and a low-threshold voltage for improved performance in higher current applications. Its integrated RDS(on) value is optimized for high-current applications, making it an efficient power switch in various high-power applications.

Advantages of the SIHB22N60S-GE3

The SIHB22N60S-GE3 provides improved efficiency and power loss performance while still offering high-current capabilities. Its key advantages include:

• Low RDS(on) value for improved efficiency
• High-speed switching for optimized efficiency
• Very low threshold voltage for higher current applications
• Very low capacitance for reduced power losses
• Skinless shielded package for improved thermal management

Conclusion

The SIHB22N60S-GE3 is an efficient N-Channel MOSFET optimized for a wide range of high-current applications. It offers various advantages such as a low RDS(on) value, high-speed switching, low capacitance and low threshold voltage for improved efficiency and reduced power loss. It is available in a common-cathode configuration with a shielded skinless package for improved thermal management. This device is suitable for a variety of applications such as switching power supplies, DC/DC converters, AC/DC converters, UPS and electric vehicle inverters.

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