SIHB12N60E-GE3

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The SIHB12N60E-GE3 is a high voltage, low on-resistance, N-channel MOSFET. It is a type of field-effect transistor (FET) which has an insulated gate, allowing it to control the shape and flow of a current with little or no current flow through it. The MOSFET, also known as an insulated-gate bipolar transistor (IGBT), is a type of electrical switch used in countless electronic applications and, depending on its size and ratings, can handle as little as ½ Amp or as much as hundreds of Amps.

The SIHB12N60E-GE3 is designed to operate under high- Voltage conditions (Vds up to 1200V) while providing low On-Resistance (RDS ON) performance. This is made possible by the use of the newer trench-gate MOSFET technology. The trench-gate structure reduces the effective gate charge and improves power losses over a conventional planar-gate structure.

The SIHB12N60E-GE3 can be used for a variety of applications. It is most commonly used in switch-mode power supplies, DC-to-DC Converters, Uninterruptible Power Supplies (UPS), motor control, drives, and battery-operated systems. The components are also well-suited for use in battery-operated systems or as a simple switch. Due to its high voltage capability, it can also be used in applications such as DC-DC converters and inverters.

The operation principle of the SIHB12N60E-GE3 is the same as any other field-effect transistor. When the gate voltage reaches a certain level, a conducting channel is formed between the source and drain. This conducting channel allows current to flow from the drain to the source, thus controlling the switch\'s output. The resistance of this channel is determined by the gate voltage. By varying the gate voltage, the conducting channel can be switched from a low resistance to high resistance state, which allows the current to be controlled.

In conclusion, the SIHB12N60E-GE3 is a high voltage, low on-resistance N-channel MOSFET designed to operate under high-Voltage conditions while providing low On-Resistance performance. It is most commonly used in switch-mode power supplies, DC-to-DC Converters, Uninterruptible Power Supplies (UPS), motor control, drives, and battery-operated systems. The operation principle of the SIHB12N60E-GE3 is the same as any other field-effect transistor, in which a conducting channel is formed between the source and the drain when the gate voltage reaches a certain level. The resistance of the conducting channel is determined by the gate voltage thus allowing the current to be controlled.

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