| Allicdata Part #: | SIR606BDP-T1-RE3TR-ND |
| Manufacturer Part#: |
SIR606BDP-T1-RE3 |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CHAN 100V POWERPAK SO-8 |
| More Detail: | N-Channel 100V 10.9A (Ta), 38.7A (Tc) 5W (Ta), 62.... |
| DataSheet: |  SIR606BDP-T1-RE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.42601 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5W (Ta), 62.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1470pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 17.4 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10.9A (Ta), 38.7A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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SIR606BDP-T1-RE3 is a high-voltage N-channel enhancement-mode Trench MOSFET. It is designed to operate in extremely harsh environment and is widely used in several industrial and commercial applications such as power converters and power supplies. The device is designed to be used with a variety of low voltage gate drive requirements. The SIR606BDP-T1-RE3 is designed using the latest revolutionary field effect technology - trench MOSFET. This type of MOSFET technology offers superior RDS(on) and excellent noise immunity. Additionally, it has a high current capability and superior switching performance. The SIR606BDP-T1-RE3 utilizes a high-voltage dome technology. This technology imparts a uniform current density profile, which allows the device to operate in extreme conditions. The high voltage capabilities of the device can reliably switch up to 600V. Moreover, the compact design of the device allows for space savings in the circuit design. The SIR606BDP-T1-RE3 follows a simple operation. When a defined voltage is applied to the gate and source pins, a channel is created between the drain and source pins. The current then starts to flow from drain to source through this channel, thereby allowing the device to switch ON. When the gate voltage drops below the defined threshold, a charge is induced across the channel, which effectively blocks the flow of current and the device switches OFF. The SIR606BDP-T1-RE3 is widely used in a variety of applications. It is usually used in high voltage power supplies, motor drives, and inverters. Additionally, it can be used in other power converter applications such as boost converters and buck converters. Furthermore, the device is suitable for use in lighting, automotive, and industrial applications. In order to ensure the optimum performance of the device, it needs to be carefully designed. The design process should consider the layout of the circuit, the external components, the operating voltage and temperature, the type and value of the gate drive, the switching frequency, and the current requirements. Additionally, the appropriate protection against electrostatic discharge, thermal runaway, and motor operation should also be implemented in order to maximize the device performance. Overall, the SIR606BDP-T1-RE3 is a high-voltage N-channel enhancement-mode Trench MOSFET. It is designed to operate in harsh environmental conditions, and its high-voltage capabilities and superior switching performance make it suitable for a variety of applications. Furthermore, its compact design and simple operating principles make it an ideal choice for power converter applications.
The specific data is subject to PDF, and the above content is for reference
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