SIR688DP-T1-GE3

Vgs(th) (Max) @ Id:	2.7V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5.4W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3105pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	66nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The SIR688DP-T1-GE3 is a transistor, or field effect transistor (FET), specifically a single Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It belongs to a class of transistors commonly used for switching, amplification, and other applications in a wide range of industries, such as automotive, industrial, communications, medical, and consumer markets. In this paper, we will discuss the application field and working principle of the SIR688DP-T1-GE3 transistor.

Application Field

The SIR688DP-T1-GE3 transistor has a wide range of applications due to its low on-state resistance, fast switching speed, and reverse voltage protection. These characteristics make it ideal for use in automotive power circuits, such as ignition and charging systems, and in low-power computer applications, such as processor power supplies. It can also be used in home appliances, power supplies, inverters, and various other medium and low-power applications. As a result, it is one of the most widely used MOSFET transistors in the world.

Working Principle

The SIR688DP-T1-GE3 is a voltage-controlled device. When a voltage is applied across its "gate" terminal, it causes a corresponding change in the conductivity of the channel between the source and the drain terminals. This change in conductivity is known as "gate modulation".When a voltage is applied to the gate terminal, a small current known as the "gate threshold current" flows from the gate to the source. This current creates an "electrical field" which attracts electrons from the source to the gate. This increases the conductivity of the channel between the source and the drain, allowing for a higher current to flow from the source to the drain. This is the basic working principle of the SIR688DP-T1-GE3 transistor.

Conclusion

The SIR688DP-T1-GE3 is a single MOSFET transistor with a wide range of applications. Its low on-state resistance, fast switching speed, and reverse voltage protection make it ideal for use in various medium and low-power applications. Its working principle revolves around gate modulation, wherein the application of a voltage to the gate terminal creates an attracting force to draw electrons from the source to the gate, thus increasing the conductivity of the channel between the source and the drain.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description