SIR632DP-T1-RE3

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The SIR632DP-T1-RE3 is a single P-channel logic level MOSFET designed for switching applications in a wide range of applications such as telecom, automotive, and industrial systems.

MOSFETs are a type of field-effect transistor (FET) that utilizes a gate terminal to control the conductivity of the current path. The gate is insulated from the source and drain by the gate oxide layer, which is the main parameter for the breakdown voltage. The main advantage of MOSFETs is their low input current, which makes them suitable for use in high-speed switching applications, such as in high-power switching supplies and power amplifiers. The SIR632DP-T1-RE3 is a particularly powerful MOSFET that can be used in a variety of high-powered switching systems.

The SIR632DP-T1-RE3 has an RDS(on) of 0.57Ω and an ID of 75A. Its on-state resistance is relatively low, making it suitable for applications that require very fine adjustment of power delivered to the load. It is also designed for maximum switching speed and low gate charge, which makes it suitable for high-speed switching systems. The SIR632DP-T1-RE3’s operating voltage range is from -60V to 150V, with a drain-source breakdown voltage of 250V.

The SIR632DP-T1-RE3 has a very low maximum drain-source on-state resistance (RDS(on)) and an extremely low gate charge. The MOSFET is designed for very high performance and can switch at extremely fast speeds. The chip has a very low gate capacitance and therefore requires much less gate charge than other single transistors to properly operate.

The SIR632DP-T1-RE3 is a logic-level MOSFET with a logic voltage level of 0.8V; this means that it can be used with 3.3V or 5V logic and will only switch on when the logic signal is below the specified voltage. This is useful in applications such as switching supplies and amplifiers, where the gate voltages must be precisely controlled. The SIR632DP-T1-RE3’s low on-state resistance also contributes to its ability to provide fast switching speeds.

In summary, the SIR632DP-T1-RE3 is a powerful single P-channel logic level MOSFET designed for high-power switching systems. It has a very low maximum drain-source on-state resistance, an extremely low gate charge and is designed for very high performance. Its low input current, low on-state resistance, and high switching speed makes it ideal for high-power switching systems. Its logic voltage level of 0.8V makes it suitable for systems that require precise control over gate voltages.

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