SIR624DP-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIR624DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR624DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 18.6A SO-8 |
More Detail: | N-Channel 200V 18.6A (Tc) 52W (Tc) Surface Mount P... |
DataSheet: | SIR624DP-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 7.5V |
Series: | ThunderFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.6A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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:SIR624DP-T1-GE3 is a part of transistors, FETs, MOSFETs and single category. Introduction of its application and working principle will be discussed in the following.
SIR624DP-T1-GE3, relatively small in size, is designed for operation in a range from -55°C to 150°C and is equipped with two individual circuits in one housing. The device has an impressive dynamic range over the entire operating temperature range. It is offered in an SOIC-8 package and is qualified in accordance with the industrial standards, with a maximum power rating of 1.6W and an adjustable current limit.
For an SIR624DP-T1-GE3 device, the threshold voltage is the voltage at which conduction begins, i.e. the voltage at which the switch turns on. The threshold voltage of an SIR624DP-T1-GE3 device is adjustable, allowing the user to tailor the switch\'s performance to a certain application. Apart from the threshold voltage, SIR624DP-T1-GE3 devices also have a gate-source voltage rating (VGS) and a VDS rating.
Due to its low current limit and low thermal impedance, SIR624DP-T1-GE3 is ideal for many industrial applications. This device is specially designed for use in low power electronic circuits, power supplies, and low frequency switching applications such as motor switching, solid-state relays, and general system control. The device is also suitable for power line monitoring, as well as current sense applications.
The working principle of SIR624DP-T1-GE3 is grounded upon MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). A MOSFET is a voltage-controlled switch that is capable of either automatically switching current on or off when a voltage is applied or removed from the gate. When a voltage is applied to the gate, it causes an electric field, which then “pulls” electrons from the source terminal, allowing conduction from the source to the drain. Removing the voltage from the gate then causes the electric field to collapse, thereby stopping conduction. With SIR624DP-T1-GE3, the amount of voltage that is needed to cause conduction can be adjusted via the gate-source voltage rating.
In conclusion, SIR624DP-T1-GE3 is an excellent choice for a wide range of industrial applications as well as low power electronic circuits and power supplies. Through the adjustable threshold voltage, SIR624DP-T1-GE3 can be tuned to improve its performance and control the switching of current on or off. Moreover, its low current limit and low thermal impedance make the device an ideal choice for its target applications.
The specific data is subject to PDF, and the above content is for reference
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