SIR618DP-T1-GE3

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The SIR618DP-T1-GE3 is an N-type enhancement-mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that offers an ideal combination of low on-state resistance (ron) and fast switching performance. This device can be used in a wide range of applications, such as power management, Motor Control, DC-DC converters, and power switching. Given its fast switching speed and low on-state resistance, this MOSFET is perfect for applications where switching losses or on-state losses need to be minimized.

In its basic form, a MOSFET is a 3-terminal voltage controlled device that is constructed from an N-type semiconductor body and a source and drain region on both sides of the body. The source region is more heavily doped with impurity atoms than the body, creating a positive potential at the source junction. Similarly, the drain region is more heavily doped than the body, making the drain junction have a negative potential. The region between the source and the drain is the active region of the MOSFET, called the channel.

The SIR618DP-T1-GE3 MOSFET also has a gate region which is lightly doped and positioned between the body and the source-drain region. Applying a voltage to the gate terminal will cause the potential of the gate region to be positive with respect to the source region, and thus electrons will be attracted to the source region. This causes the channel region between the source and the drain to be quickly filled with electrons, making the channel region a conductor and the MOSFET to be turned on. When the voltage applied to the gate terminal is removed, the channel region will no longer be filled with electrons, and the MOSFET will be turned off.

The SIR618DP-T1-GE3 MOSFET specifically offers ultra-low on-state resistance due to its structure and design. It also provides high switching speeds to reduce switching losses, making it perfect for applications where power conversion is essential. The device is ideal for switching power loads, such as in DC-DC converters and power management circuits. It is also great for motor control applications and power switching circuits where fast switching speed and low on-state resistance are needed.

Typically, the SIR618DP-T1-GE3 MOSFET is used for switching power loads in the range of 4.5 V to 20 V, and with an input signal source capacitance ranging from 0.5 pF to 5 pF. This device has a total gate charge of 30 nC and a typical on-resistance of 1.2 mΩ. It is available in a PQFN6 package with a maximum of 6 pins. It is AEC-Q101 qualified and offers up to 10000 cycles of remeasurement cycles and up to an 8000V ESD rating.

In conclusion, the SIR618DP-T1-GE3 MOSFET offers an ideal combination of low on-state resistance and fast switching performance, and is most commonly used in power management, Motor Control, DC-DC converters, and power switching applications. Its ultra-low on-state resistance, high switching speeds, and small size make it a great choice for applications where power conversion is essential.

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