SIR638ADP-T1-RE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIR638ADP-T1-RE3CT-ND |
Manufacturer Part#: |
SIR638ADP-T1-RE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 100A POWERPAKSO |
More Detail: | N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount Po... |
DataSheet: | SIR638ADP-T1-RE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9100pF @ 100V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 0.88 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Cut Tape (CT) |
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The SIR638ADP-T1-RE3 is a silicon-epitaxial-base NPN transistor with outstanding high-frequency performance. It is a low-noise device with minimal capacitance, making it an ideal choice for amplifying, switching, or measuring applications.
The SIR638ADP-T1-RE3 belongs to the family of MOSFETs and single transistors, meaning it has a metal oxide semiconductor field-effect transistor (MOSFET) with a single vertical power. This type of transistor is well-suited for many applications because it has a higher transconductance than conventional transistors. This can be used to obtain higher gains or improve switching speeds. Because the gate voltage is not affected by input voltage, the device is capable of delivering stable performance with good temperature coefficients. This makes it a good choice for circuits operating in harsh environments.
The working principle of the SIR638ADP-T1-RE3 lies in the fact that it has two transistors: one N-channel and one P-channel. This means when the gate voltage is applied, the N-channel will conduct, allowing a current to flow through the device. Similarly, when the P-channel is activated, a current will flow from source to drain. By combining these two transistors and properly engineering the gates, this transistor can be very efficient in both power consumption and speed-switching.
The SIR638ADP-T1-RE3 can be used in many different applications. It can be used as a high-frequency oscillator or amplifier due to its low noise and low frequency capabilities. Its fast switching capability makes it suitable for digital systems and power management systems. Its low saturation voltage makes it suitable for low voltage operations, and its high thermal resistance makes it suitable for high temperature environments.
Other application fields include automotive and industrial systems, medical equipment, and consumer electronics. The low capacitance and high speed of the SIR638ADP-T1-RE3 make it an excellent choice for driving low-voltage circuits in high-power applications. Its low power consumption and cost-effectiveness make it an ideal choice for power management applications.
In conclusion, the SIR638ADP-T1-RE3 is an excellent choice for a wide range of applications. It is a low-noise, low-fee device with minimal capacitance, making it a great choice for signal processing, switching, and amplifying applications. Its fast switching rate and low saturation voltage make it an ideal choice for digital systems and low voltage operations. Its high thermal resistance makes it a good choice for applications operating in extreme temperatures. With its wide range of applications, it is sure to find a place in many different projects.
The specific data is subject to PDF, and the above content is for reference
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