SP8M24FRATB Allicdata Electronics
Allicdata Part #:

SP8M24FRATBTR-ND

Manufacturer Part#:

SP8M24FRATB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: 4V DRIVE NCH+PCH MOSFET (CORRESP
More Detail: Mosfet Array N and P-Channel 45V 4.5A (Ta), 3.5A (...
DataSheet: SP8M24FRATB datasheetSP8M24FRATB Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, 63 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The SP8M24FRATB application field is mainly used in the fields of power electronics and power conversion, such as the main control board of the synchronous rectifier circuits, the secondary control board of the PFC circuits and other rectifier stages controllers. The SP8M24FRATB has been widely used in various power electronic circuits for its special characteristics and its inherent advantages. In addition, the device can also be used in other related control applications, such as motor control and actuation control.

SP8M24FRATB is a MOSFET array with 24-channel P-type FETs and each channel of the device has the same electrical characteristics. The device is composed of N-type MOSFETs, which act as the input of the device and the P-type MOSFETs, which act as the output of the device. The connection of the N-type and the P-type MOSFETs can be easily achieved by using the provided connectors.

The working principle of SP8M24FRATB is based on the resistive-capacitive (RC) load model. The load cycle consists of four different parts, namely1) Drain-Source Resistance, 2) Channel Depletion Capacitive, 3) Gate-Source Voltage, 4) Gate-Drain Voltage. The input to the device is a combination of a tunneling analog voltage and a capacitive voltage transmission. The gate-source voltage is used to turn the P-FETs on and the gate-drain voltage is used to turn the N-FETs off. The device works as an open loop, closed loop or combination of both by setting the reference voltage on the gate-source and gate-drain junctions. The voltage reference can be adjusted by the user-defined parameters and the states of the individual FETs is determined by the input voltages. The FETs are then arranged in an array-like structure known as a multiplexer. The multiplexer provides the control signals to the FETs and is used to control the power delivered to the load.

The SP8M24FRATB device has seen a remarkable increase in usage in the power electronics and power conversion segments. It is highly reliable, efficient and can be easily integrated into existing designs. Furthermore, it offers superior flexibility, which makes the device suitable for the wide range of applications in which the device is heavily utilized. The device works by controlling the power flow of the power electronics and power conversion circuits and provides an excellent level of accuracy and control.

The specific data is subject to PDF, and the above content is for reference

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