Allicdata Part #: | SP8M3FU6TBTR-ND |
Manufacturer Part#: |
SP8M3FU6TB |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V 5A/4.5A 8SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 5A, 4.5A 2W Surfa... |
DataSheet: | SP8M3FU6TB Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.35906 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | *M3 |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 51 mOhm @ 5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A, 4.5A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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.The SP8M3FU6TB is a voltage controlled FET, also known as an array FET device. It is a single integrated device that is designed to provide multiple output channels in one package, allowing the device to offer higher performance and enhanced protection, compared to traditional FET devices. This compact device is used in a wide range of applications, including automotive, consumer electronics, and industrial controls.
The SP8M3FU6TB is a semiconductor that is composed of three individual FETs that are arranged in a parallel configuration. This arrangement enables the device to provide high current handling capabilities and improved system efficiency, since the FETs can operate independently and in a synchronized fashion. Each FET has a separate gate and drain terminal, and the device provides both MOSFET and depletion mode FET functionality. The device features a wide range of features, including automated current balancing, protection against faults and overcurrent, and low power consumption.
The SP8M3FU6TB is designed to provide a high degree of protection or immunity against external overvoltage, as well as fault or short circuit protection. This is done by incorporating two overlapping and opposing semiconductor junctions which provide electrical transistors that switch between low and high resistance states and control the flow of current. This effectively prevents the device from being damaged in the event of an electrical fault. As such, the device is well suited for use in automotive, consumer electronics, and industrial applications.
In addition, the SP8M3FU6TB is designed to provide low power consumption and enhanced system efficiency. This is achieved using its proprietary low power design, which includes multiple low power modes and the use of advanced transistors that enable the device to operate efficiently without generating a large amount of heat. The device is also designed to provide increased system stability and reliability, as well as improved noise immunity.
Overall, the SP8M3FU6TB is an effective and reliable FET device that is designed for a wide range of uses. It offers high current handling capabilities and improved system efficiency, as well as a wide range of features that provide enhanced protection and low power consumption. This makes it an ideal choice for automotive, consumer electronics, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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