
Allicdata Part #: | SP8M2FU6TB-ND |
Manufacturer Part#: |
SP8M2FU6TB |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V 3.5A 8SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 3.5A 2W Surface M... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.30733 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | *M2 |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 3.5nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 83 mOhm @ 3.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Standard |
FET Type: | N and P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The SP8M2FU6TB is a transistor array made up of multiple transistors that are combined together in a single package. Transistor arrays are typically used in circuits where multiple logic functions need to be performed. SP8M2FU6TB is a complementary MOS wall type dual gate 6 Transistor (CMOS) array.
Complementary metal-oxide-semiconductor field-effect transistors (CMOS FETs) are among the most widely used and versatile semiconductor devices that can be used in various applications. The SP8M2FU6TB is a particularly versatile FET which has been widely used for a range of digital and analog applications.
The SP8M2FU6TB is made up of 6 transistors, each with a P-type (positive) and an N-type (negative) gate. The 6 transistors can be connected together in various ways to create different logic functions such as AND, OR, XOR, etc. All the transistors in the array are connected in parallel to form a single “composite” transistor.
The design of the SP8M2FU6TB is such that it can switch two different voltages with a single input, thus making it ideal for applications where two independent circuits need to be operated at the same time. This type of dual-gate MOS is also known as a pass transistor, and is often used in circuits where the input voltage needs to be connected to two outputs.
The SP8M2FU6TB has many advantages over traditional transistors. The array\'s smaller size and low power consumption make it well-suited for integrated circuit design. It also has a low threshold voltage and high gain, making it ideal for low power logic circuits.
The SP8M2FU6TB is also more resistant to temperature and voltage variations than traditional transistors, making it a good choice for applications requiring highly reliable operation. It has a wide range of available supply voltages and is often used in high-tech electronics, from computers to cellular phones.
The SP8M2FU6TB is also ideal for use in digital signal processing (DSP) and other high-speed analog applications. It has a fast response time and can be used to control high-frequency signals, making it suitable for use in ultra-high-speed systems such as laptops and cell phones, as well as other communications equipment.
To summarize, the SP8M2FU6TB is a versatile transistor array that is well-suited for a wide range of applications in the field of electronics. It makes use of the effective pass transistor design to switch voltages quickly and efficiently while providing a low threshold voltage and high gain. Its small size, low power consumption, and high-temperature and voltage-tolerant design make it an ideal choice for applications in digital signal processing and other high-speed analog applications.
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