SP8M5TB Allicdata Electronics
Allicdata Part #:

SP8M5TBTR-ND

Manufacturer Part#:

SP8M5TB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N/P-CH 30V 6A/7A 8SOIC
More Detail: Mosfet Array N and P-Channel 30V 6A, 7A 2W Surface...
DataSheet: SP8M5TB datasheetSP8M5TB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Base Part Number: *M5
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Transistors – FETs, MOSFETs – Arrays

The SP8M5TB is a power LSI device that integrates 66 low-on-resistance MOSFETs and DMOS FETs (MOS field effect transistors) in a single package. It is suitable for high current switching applications such as those found in power electronics, automotive, industrial and telecommunication applications. The SP8M5TB is designed to switch heavy loads with high latency and provide a low-on-resistance, high-temperature environment.

The SP8M5TB is an array device that consists of 6-channel half-bridges (10A channel current capacity; 13A total current capacity) and 20-channel low-side (1A channel current capacity; 10A total current capacity) switches arranged in a dual inline package (DIP). It is composed of one Bank 0 with 18 MOSFETs and one Bank 1 with 6 MOSFETs. The chips can be combined in order to implement multiple half-bridges with up to 12 channels or a single full-bridge configuration up to 10 channels. Each chip can be separated independently by a breakaway feature, in order to simplify the assembly procedure.

The SP8M5TB works with an operating voltage between 4.5 and 12 V. The device features a low on-resistances of typically 0.6 Ω and up to a 12 μA gate leakage current. The output devices also feature a high thermal stability and a temperature range of -40 °C to +125 °C. The driver can handle a maximum non-repetitive current of up to 10A for 100 μs.

The device features a Fault Protection feature, which is designed to protect the IC from current and temperature stress. When any of the protection conditions is met, the driver shuts down the output, resulting in an over-current and over-temperature protection. Additionally, there is also a Soft Start feature, which is designed to minimize the application of high current in case of inrush current or high capacitance load.

The SP8M5TB is equipped with an on-chip voltage regulator, which allows the device to remain stable in case of inputs up to 18 V. The device also has an internal PWM or analogue control mode, which makes it suitable for applications requiring variable speed control. The device also supports direct control through a logic input.

The SP8M5TB is designed to meet the needs of rugged applications, since it is equipped with an integrated ESD protection circuit, which meets the stringent requirements of automotive applications. In addition, the device integrates overvoltage and reverse current protection through the integrated protection circuit. This makes the device suitable for multiple applications, such as motor control, DC/DC converters, and portable devices.

In short, the SP8M5TB is a power LSI device that provides high current switching and high reliability in a small package. It is ideal for applications that require high-current switching and high temperature conditions, such as automotive, industrial and telecommunication applications.

The specific data is subject to PDF, and the above content is for reference

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