SP8M8FU6TB

The SP8M8FU6TB is a high-speed power MOSFET array part of the expanded SuperFET family. It is a full-body vertical N-channel power MOSFET array with two separate devices in the same package. The single integral MOSFET chip uses a revolutionary trench technology process that provides optimal performance and reliability. The device has excellent RDS(ON) values coupled with low gate charge and provide good dV/dt reliability and low capacitance. It also features an integrated Schottky diode for optimized EMI performance.

The SP8M8FU6TB power MOSFET array is ideal for use in switching power supplies, mobile equipment, and computer chassis where high-speed switches are needed. The device is capable of fast switching speeds and low input capacitance, making it suitable for applications requiring MHz level switching. The non-linear EMI characteristic of the Schottky diode helps minimize signal interference. The small package size of the device makes it an excellent choice for board designers who are looking to save space.

The SP8M8FU6TB power MOSFET array utilizes an MOSFET similar to those found in modern computers. As a voltage is applied to the gate, the MOSFET will turn on and start drawing current from the source. This current is then passed through the source-drain resistor, and the load placed across the source and drain will draw current from this resistor. The device has a very low RDS(ON), which allows for very low power consumption when on. The device also has a very fast switch-on time, making it ideal for many demanding applications.

The SP8M8FU6TB power MOSFET array is extremely reliable and is capable of high frequency operation. It is designed to handle high-temperature operation and has an ideal operating temperature range of -55°C to 175°C. The device is protected against latch-up and surge conditions, making it an excellent choice for controlling high current switches. The device can also be used to drive LEDs, as it has a low input capacitance and maximum frequency of 3MHz.

The SP8M8FU6TB power MOSFET array is a reliable and cost-effective solution for many applications. It offers high power efficiency and fast switching speed, as well as a Schottky diode for minimizing EMI. The device also has an extremely low input capacitance and a maximum frequency of 3MHz. The small package size and excellent thermal performance make it an ideal choice for portable devices, making it a great solution for any application requiring a power MOSFET array.