SP8M7TB Discrete Semiconductor Products |
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Allicdata Part #: | SP8M7TBTR-ND |
Manufacturer Part#: |
SP8M7TB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V 5A/7A 8SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 5A, 7A 2W Surface... |
DataSheet: | SP8M7TB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | *M7 |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 51 mOhm @ 5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A, 7A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SP8M7TB is a type of Field-Effect Transistor (FET) array, as well as a type of Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) array. It is designed to be used in various electronic systems and is suitable for low voltage and low power device applications. The SP8M7TB contains eight MOSFET transistors, each based around an N-channel MOSFET, which are arranged side-by-side in the array. The transistors are activated when a voltage signal is applied to the gate terminal of the device, which connects to the substrate. The current flows through the substrate and is controlled by the amount of voltage applied to the gate terminal. The array also includes two separate drain terminals, one for each transistor. This allows for individual control of each transistor, which helps to make it more versatile among other FET and MOSFET arrays.
The working principle of the SP8M7TB is fairly simple, but quite effective. When a voltage signal is applied to the gate terminal, electrons are attracted to the substrate and thus current begins to flow. The voltage applied to the gate is what controls the amount of current flowing through the substrate, and thus the device. As the voltage applied to the gate increases, so does the current moving through the substrate, and vice versa. The electrodes that are connected to the source and drain terminals help to regulate the amount of current flowing through the device. The SP8M7TB can be used as a switch or a voltage regulator, depending on the application the user desires.
The SP8M7TB has many advantages over other types of FET and MOSFET arrays, particularly in low voltage and low power applications. It is much more reliable than its counterparts, with a much longer lifetime and higher efficiency. This makes it well suited for both small and large applications. Additionally, due to its array design, the SP8M7TB can be used to control multiple devices from one input. This is especially useful in many industrial and commercial applications, where multiple devices must be controlled from a single input point.
In conclusion, the SP8M7TB is a very versatile and reliable FET and MOSFET array. It offers many advantages compared to other similarly sized arrays, particularly in low voltage and power applications. Additionally, its array design makes it well suited for controlling multiple devices from one input, making it ideal for many industrial and commercial applications. Thanks to its reliable and efficient operation, the SP8M7TB has become a popular choice for many electronic systems and will likely remain so for years to come.
The specific data is subject to PDF, and the above content is for reference
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