SP8M5FRATB

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Standard
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta), 7A (Ta)
Rds On (Max) @ Id, Vgs:	30 mOhm @ 6A, 10V, 28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	7.2nC @ 5V, 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	520pF @ 10V, 2600pF @ 10V
Power - Max:	2W
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

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SP8M5FRATB Application Field and Working Principle

The SP8M5FRATB is a type of high voltage lateral N-channel Metal Oxide Semiconductor Field Effect Transistor, or MOSFET Array. It is manufactured by the Semelab company. As the name suggests, the device is a four-element integrated circuit containing four N-channel MOSFETs in a single, small footprint package. It is suitable for a range of applications including power management, motor control and voltage regulation.The SP8M5FRATB consists of four separate N-channel MOSFETs, each one located in its own pocket in the device’s ‘V’-shaped package. The four MOSFETs are electrically isolated, but arranged so that they are connected by the same drain and source power terminals. This is known as a Lateral MOSFET Array.The advantages of a lateral MOSFET array device over a single MOSFET can be substantial, particularly when used in multi-channel applications. For example, the combined area needed to fit four separate MOSFETs into a system is much larger than for a single MOSFET, but much smaller when using an array. Additionally, the amount of thermal resistance is much lower as the individual MOSFETs can share a single heat sink.The SP8M5FRATB also offers considerable performance benefits. Thanks to a power rating of 8A, it’s able to switch up to 30V of instantaneous voltage and handle up to 120W of continuous power out from a single chip. Such performance fits the SP8M5FRATB for use in a variety of high-power applications such as DC-DC and AC-DC power converters, motor control systems, and lighting systems.MOSFETs, in general, are current-controlled semiconductor devices which are commonly used for a range of power management related tasks. In general, their working principle is as follows. When a voltage is applied to the Gate terminal with respect to the Source terminal, a current, or gate-to-source current (IGSS), flows between the drain and the source. If there is more than a certain threshold voltage applied, the channel opens, allowing current to flow, so-called channel conductance.The SP8M5FRATB device is designed to be connected to an external gate driver IC in order to apply the appropriate threshold voltage and control the channel conductance. This design requirement allows the user to accurately adjust the channel conductance according to their application.As well as being suitable for a range of high-voltage and high-power applications, the SP8M5FRATB also provides higher levels of integration and lower EMI due to its integrated package.In conclusion, the SP8M5FRATB is a stylish and effective four element N-channel MOSFET Array providing a low power, low thermal resistance solution in a very small form factor. Its numerous advantages, such as the ability to share a single heat sink and the lower than usual EMI, mean that it accelerates the development of multi-channel applications. Additionally, its suited to a range of applications from power management to motor control and other high-power/high-voltage activities.

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