SP8M4FU6TB

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SP8M4FU6TB is a power MOSFET array integrated circuit (IC) consisting of seven independent N-channel MOSFETs rated at 200V and 80A. It features fast switching times, low on-state resistance, low gate charge and low gate-source voltage capability. It finds use in power converters, power supply, motor controls, lighting controls, multiplexers and audio amplifiers.

Description

The SP8M4FU6TB is a seven-channel, integrated power MOSFET with a maximum on-state resistance (RDS(on)) of 0.023Ω at 4.5V VGS, and a 0.16Ω guaranteed RDS(on) at 4.5V. It provides both low insertion losses and low RDS(on) values with fast switching. The 40V maximum gate-source voltage allows the device to be operated at higher temperatures as well as higher voltages. It includes a built-in gate-protection diode that allows data rates up to 7.5A/µs with a fast response time (125ns). The SP8M4FU6TB is housed in an 8-pin surface-mount package with a thermal pad.

Applications

The SP8M4FU6TB power MOSFET can be used in high-power applications such as solenoid control, motor control, lighting control, multiplexers and audio amplifiers. Its low on-state resistance also makes it suitable for use in fast switching power converters, power supplies and switching regulators for applications with fast transient time. The SP8M4FU6TB is also used in telecom, networking and automation systems.

Working Principle

A power MOSFET is an electrically-controlled switch which has two different doping regions in the channel. When a voltage is applied to the gate electrode, the channel will be inverted in the area near the gate and forms an “inverted-channel” due to the presence of strong electric fields. This causes a conductive channel to form between the source and drain electrodes. The current flows between the source and drain electrodes due to the electron mobility of the minority carriers in the channel. Gate voltage is the main parameter in controlling the amount of current flow. The current flowing between the source and drain electrodes can be controlled by adjusting the gate voltage.

The SP8M4FU6TB has two separate and independent gate source terminals which allow the user to control each FET independently. Each MOSFET has a target RDS(on) parameter, which aims for a specific on-resistance. This design aids in lowering the overall power dissipation. The built-in gate protection diodes protect the FET from static electro-static discharge (ESD) and voltage transient events. In order to meet the tight SRF and peak di/dt requirements, tight control is maintained on the characteristics of the FETs.

Conclusion

The SP8M4FU6TB is a power MOSFET array integrated circuit (IC) which is designed for use in high-power applications such as solenoid and motor controls. It features low on-state resistance, fast switching times, low gate charge and low gate-source voltage capability. The minimum gate voltage is 4.5V, and its built-in protection diode allows short circuit current up to 7.5A/µs. Thanks to its low on-state resistance, the SP8M4FU6TB is suitable for use in fast switching power converters, power supplies and switching regulators for applications with fast transient time. It is also used in telecom, networking and automation systems.

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