SP8M3TB Allicdata Electronics
Allicdata Part #:

SP8M3TBTR-ND

Manufacturer Part#:

SP8M3TB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N/P-CH 30V 5A/4.5A 8SOIC
More Detail: Mosfet Array N and P-Channel 30V 5A, 4.5A 2W Surfa...
DataSheet: SP8M3TB datasheetSP8M3TB Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Base Part Number: *M3
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SP8M3TB is a type of transistor array, specifically a field effect transistor (FET) array. It is designed for applications that require an array of transistors with a wide variety of functions. In its most basic form, it is a two-dimensional array of transistors, with each individual transistor acting as an independent electronic switch. SP8M3TB is typically used in applications such as power management, analog data processing, and other mixed signal designs.

The SP8M3TB array is composed of eight individual transistors, with each transistor having three terminals, labeled source, gate, and drain. The source and drain terminals are at the opposite ends of the transistor, while the gate terminal is located in between them. When the gate terminal is activated, current flows from the source to the drain, allowing the SP8M3TB array to function as an analog circuit.

The working principle of the SP8M3TB is fairly simple. When the gate terminal is activated, a voltage difference is created between the source and drain terminals, which causes an electric current to flow through the transistor. This current can be regulated by changing the voltage on the gate terminal. By changing the voltage on the gate terminal, it is possible to manipulate the properties of the transistor, such as its frequency response, voltage and current gains, and even its input/output characteristics.

SP8M3TB transistors can also be used in more sophisticated applications, such as signal amplification and filtering. By using small changes in the voltage on the gate terminal, SP8M3TB transistors can create a wide range of electrical signals, from low-level signals for low-power applications, to high-power signals for more power-hungry applications.

The SP8M3TB transistors are also relatively inexpensive and easy to use, making them ideal for a variety of applications. They are often used in consumer electronics, industrial automation, and medical devices. With its versatility and cost-effectiveness, it is no wonder why SP8M3TB transistors remain a popular choice among engineers.

The specific data is subject to PDF, and the above content is for reference

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