Allicdata Part #: | SP8M51FRATBTR-ND |
Manufacturer Part#: |
SP8M51FRATB |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 4V DRIVE NCH+PCH MOSFET |
More Detail: | Mosfet Array N and P-Channel 100V 3A (Ta), 2.5A (T... |
DataSheet: | SP8M51FRATB Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.50512 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta), 2.5A (Ta) |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 3A, 10V, 290 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 5V, 12.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 610pF @ 10V, 1550pF @ 25V |
Power - Max: | 2W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The SP8M51FRATB is an advanced integrated circuit (IC) developed as a part of the SPxM51 family of devices by Seiko Epson. This product is an array of field effect transistors (FETs) with pre-drilled resistors, capacitors, and diodes to allow the user greater flexibility when designing their application. The key features of this device include an integrated PAK container, low on-resistance, low gate charge drain to source resistance, and low turn-on and turn-off delay times. This device is also designed to offer excellent thermal stability, reliability and durability. Together, these features make the SP8M51FRATB an ideal choice for a wide range of applications such as power switching, motor control, and power conversion.
The SP8M51FRATB is built with a wide range of application-specific components, making it suitable for a variety of applications. These include hybrid DC-DC converters, DC-AC inverters, battery chargers, power supplies, motor drives and automotive applications. The integrated components in the device help to reduce the number of external components required, thus making the design more cost-effective and efficient. This also enhances the overall performance of the device.
The working principle of the SP8M51FRATB is fairly simple. This device consists of four individual FET elements - two n-channel and two p-channel devices - that are interconnected as shown in the diagram above. When a gate voltage is applied, the n-channel devices turn on, allowing current to flow through them. At the same time, the p-channel devices are turned off, blocking current flow. This process is repeated for the other two FETs, until both p-channel and n-channel devices are in the off state. This allows the user to easily switch between different voltage levels.
In addition to its various applications, the SP8M51FRATB is also highly reliable and durable. It has been rigorously tested by Seiko Epson and meets various safety standards, such as under voltage lockout. This device also features a wide range of protective features, including over-voltage and over-temperature protection. This ensures that the device can handle a wide range of environmental conditions and heavy loads.
The SP8M51FRATB is suitable for use in many different types of applications. Its robust design and flexible configuration makes it an ideal choice for a wide range of power switching, motor control, and power conversion applications. This device is also well suited for use in automotive applications where its high efficiency, thermal stability, and reliability make it an ideal choice. The ease of use and comprehensive documentation make this device perfect for an array of uses.
The specific data is subject to PDF, and the above content is for reference
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