SPW20N60C3E8177FKSA1

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The SPW20N60C3E8177FKSA1 is a single N-Channel enhancement mode vertical DMOS FET. It is designed to replace IGBTs and MOSFETs in industrial, appliance and automation applications. This device offers low on-state resistance (RDS(on) of 17.7mΩ at 10V gate-source voltage) and fast switching time. In addition, its rugged and time-saving assembly enables high efficiency power transfers at high quality.

Application Field

The SPW20N60C3E8177FKSA1 is mainly used in high temperature environment control such as temperature inductors, solenoids and thermostats. It is also used in power inverters and power converters, particularly in distributed power systems. Its application areas also include motor control, battery management, pulsed power systems, and the automotive industry.

Working Principle

The SPW20N60C3E8177FKSA1 is an enhancement mode vertical DMOS FET. It is designed with a floating upper part that performs as a continuous resistor. The lower part acts as a vertical MOSFET device and has a current sink, grid and drain that carry the current. When voltage is applied at the gate, the depletion region crosses and the current contains is increased. The resistance decreases and it can switch the transistor between on and off states.

When supplying current to an appliance or other system, the SPW20N60C3E8177FKSA1 works as a power switch. It can control the application of current to the system, turning it on and off as needed. In most cases, the power switch is connected to a microcontroller or other hardware to monitor and control the flow of current. This type of device is ideal for operations requiring rapid switching and high current levels.

The SPW20N60C3E8177FKSA1 is built with a semi-insulating gate oxide. This gate material insulates the transistor from internal gate voltages, making the device withstand extreme temperature conditions. The device also has a robust package with high dV/dt and dI/dt immunity, which makes it suitable for various applications.

The SPW20N60C3E8177FKSA1 has low saturation voltage and high current limits making it suitable for high efficiency power conversions. It is also capable of driving large capacitive loads and operating in hard switching conditions such as AC voltage corrections.

In summary, the SPW20N60C3E8177FKSA1 is a single N-Channel enhancement mode vertical DMOS FET designed to replace IGBTs and MOSFETs in industrial, appliance and automation applications. With high dV/dt and dI/dt immunity and low saturation voltage, this device offers low on-state resistance and fast switching time, making it ideal for demanding applications.

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