| Allicdata Part #: | SPW20N60C3FKSA1-ND |
| Manufacturer Part#: |
SPW20N60C3FKSA1 |
| Price: | $ 4.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V 20.7A TO-247 |
| More Detail: | N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole P... |
| DataSheet: |  SPW20N60C3FKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 4.24620 |
| 10 +: | $ 3.78882 |
| 100 +: | $ 3.10697 |
| 500 +: | $ 2.51587 |
| 1000 +: | $ 2.12181 |
| Series: | CoolMOS™ |
| Packaging: | Tube |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 13.1A, 10V |
| Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 208W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO247-3 |
| Package / Case: | TO-247-3 |
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The SPW20N60C3FKSA1 is an N-channel vertical power MOSFET produced by Infineon Technologies. This particular device is designed to be used in high voltage, high power applications, such as automotive, industrial power, and consumer electronics. It is capable of switching current up to 350A, making it suitable for a wide variety of applications. The SPW20N60C3FKSA1 is a vertical power MOSFET that operates using a unique structure, combining an integrated body diode with a MOSFET structure. It has an on-resistance of typically 600 mΩ and an avalanche ruggedness of greater than 150 % of its rated current. This makes it well suited for use in high power applications, as it can handle a large amount of current without overheating or failing.
The SPW20N60C3FKSA1 works using the principle of a MOSFET. It is a type of field effect transistor (FET) that utilizes Metal-Oxide-Semiconductor (MOS) technology. It creates an electronic switch that is electronically controlled and can be turned on or off. The MOSFET works by controlling the current flow between its source and its drain. The source and the drain are connected to a voltage source and the voltage across it determines whether the MOSFET will be turned on or off. By utilizing the MOS technology and specialized design, the device is able to achieve a very fast switching time, with the turn-off time being shorter than that of other FETs.
The SPW20N60C3FKSA1 is typically used in automotive, industrial power, and consumer electronics applications, due to its ability to drive current at high voltages. As mentioned before, it can operate with currents up to 350A, making it a great choice for applications such as power supplies, motor controllers, and motor drives. It can also be used in applications such as lighting, AC inverters, and solar applications, since it is capable of switching current at high voltage and high power.
The SPW20N60C3FKSA1 is a powerful, versatile MOSFET that is designed to handle high current and high voltage. Its integrated body diode and MOSFET structure make it an ideal choice for a variety of applications, and its high power rating makes it well suited for high power applications. Its fast switching time and avalanche ruggedness make it a reliable and safe choice for anyone looking for a reliable MOSFET solution.
The specific data is subject to PDF, and the above content is for reference
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