Allicdata Part #: | SPW20N60S5FKSA1-ND |
Manufacturer Part#: |
SPW20N60S5FKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 20A TO-247 |
More Detail: | N-Channel 600V 20A (Tc) 208W (Tc) Through Hole PG-... |
DataSheet: | SPW20N60S5FKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 103nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
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SPW20N60S5FKSA1 is a high-performance N-channel MOSFET from a semiconductor manufacturer NXP Semiconductors. It is designed to be used in applications where high power, low on-resistance, and fast switching speed are the key requirements. This MOSFET has many applications in the fields of automotive, medical, industrial, and consumer products. It is also suitable for use in motor controllers, Brushless DC (BLDC) motor drivers, solar charge controllers, battery management systems, electronic load controllers, and various other high-power switching applications.
A MOSFET is an insulated-gate field effect transistor that provides improved switching performance compared to traditional bipolar junction transistors. It consists of a source, a drain and a gate, which can be operated in a transistor-like fashion. In the case of SPW20N60S5FKSA1, the source is connected to the positive supply and the drain is connected to the load. The gate of the MOSFET is connected to a control signal that can be used to either turn the transistor on or off. By depending on the control signal, the conduction path from the source to the drain can be opened or closed. This allows the user to control the flow of current through the MOSFET, and thus regulates the power to a load.
The SPW20N60S5FKSA1 is a N-type MOSFET, which means that it is normally off and can be turned on using an appropriate signal applied to the gate. The device has a low on-state resistance of 0.0019 Ω (RDS(on)) and a high current rating of 24.6A. It is capable of handling repetitive peak currents up to 56A and can operate at temperatures as high as 175℃. The device has a maximum drain-source voltage rating of 600V, making it suitable for use in high-voltage switching applications. Additionally, the device has fast switching speed, due to its low gate charge (Qg) of only 15nC. This makes it ideal for high-frequency switching applications.
The SPW20N60S5FKSA1 is a popular choice for applications that require high power, low on-resistance, and fast switching speed. It is often used in automotive applications such as motor controllers, solar charge controllers, and battery management systems, as well as medical, industrial, and consumer products that require reliable high-power switching operations.
The specific data is subject to PDF, and the above content is for reference
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