| Allicdata Part #: | SPW24N60CFDFKSA1-ND |
| Manufacturer Part#: |
SPW24N60CFDFKSA1 |
| Price: | $ 3.79 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V 21.7A TO-247 |
| More Detail: | N-Channel 650V 21.7A (Tc) 240W (Tc) Through Hole P... |
| DataSheet: |  SPW24N60CFDFKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 240 +: | $ 3.40830 |
| Series: | CoolMOS™ |
| Packaging: | Tube |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 21.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 185 mOhm @ 15.4A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs: | 143nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3160pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 240W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO247-3 |
| Package / Case: | TO-247-3 |
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SPW24N60CFDFKSA1 is a power semiconductor MOSFET (Metal-Oxide Semiconductor Field Effect Transistor), developed by Infineon Technologies, offering superior performance for power conversion applications. This MOSFET plays an important role in the development of modern energy-efficient systems that require high input and power. It is primarily designed to be used in applications such as dc-dc converters, motor drives, battery-powered applications, solar power systems and other industrial applications.
The SPW24N60CFDFKSA1 is based on advanced trench-style trench-gate MOSFET technology. This high-voltage MOSFET is mainly used in power switch mode applications. Its capability to switch current and voltage efficiently facilitates different types of power applications. It is also highly scalable, suitable for applications that require higher voltages and/or currents.
The SPW24N60CFDFKSA1 MOSFET is a uni-polar N-channel MOSFET and is available in a through-hole design. Its highest drain current rating is 24A, and highest drain-source voltage is 600V. This MOSFET is capable of providing very low on-state resistance, making it an ideal choice for high-efficiency applications like solar power inverters.
The main working principle of SPW24N60CFDFKSA1 is partially based on the metal-oxide-semiconductor, which comes with a metal-oxide layer and metal gate. This transistor is internally composed of three terminals, the source, gate and drain. When the gate is at a high voltage, an inversion layer forms beneath the oxide layer, generating a conductive channel between the source and drain. This enables current to flow from source to drain.
SPW24N60CFDFKSA1 offers several advantages compared to traditional semiconductors. It has high efficiency of power conversion and delivers a very low on-state resistance. Additionally, it is able to operate at very high frequencies with very low switching losses, and can handle high voltages and/or currents. This makes it an ideal choice for applications in motor drives, dc-dc converters, battery-powered applications and solar power systems.
In conclusion, SPW24N60CFDFKSA1 is an advanced power MOSFET offering excellent performance for high-voltage and/or current applications. It offers an excellent level of functionalities, including very low on-state resistance, high efficiency and very low switching losses. It is an ideal choice for power applications requiring high voltages and/or currents, such as dc-dc converters, motor drives, battery-powered applications and solar power systems.
The specific data is subject to PDF, and the above content is for reference
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