Allicdata Part #: | SPW20N60CFDFKSA1-ND |
Manufacturer Part#: |
SPW20N60CFDFKSA1 |
Price: | $ 3.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 20.7A TO-247 |
More Detail: | N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole P... |
DataSheet: | SPW20N60CFDFKSA1 Datasheet/PDF |
Quantity: | 1000 |
240 +: | $ 3.16725 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 124nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
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The SPW20N60CFDFKSA1 is a high-speed power MOSFET (metal oxide semiconductor field effect transistor) of the N-channel type which makes use of the latest advances in field effect transistor technology to achieve excellent switching performance and low gate charge result in superior performance in many applications. In addition, the SPW20N60CFDFKSA1 technology is suitable for high-power applications and can provide very fast switching speeds with low on-state resistance (RDS(on)).
Application Field
The SPW20N60CFDFKSA1 is suitable for a wide range of applications, such as power conversion, lighting, motor control, audio, and consumer electronics applications. It is perfect for high frequency, soft switching, and high power switching applications. Its low profile and extremely low on-state resistance also make it ideal for Point-of-Load DC-DC conversion applications. Also, the SPW20N60CFDFKSA1 is suitable for high input voltage applications, such as AC line-operated motor control and AC-DC motor drives.
Working Principle
The SPW20N60CFDFKSA1 is an N-channel power MOSFET. It consists of an insulated gate that acts as an electronic switch; the gate is connected to a metal gate electrode placed between two source and drain regions made of semiconducting material. The drain and source terminals are formed on either side of the gate region. When a positive voltage is applied to the gate electrode, a conducting channel is formed between the source and drain regions, and the device is turned ON. When the voltage is removed, the conducting channel is cut off, and the device is turned OFF. In this way, the SPW20N60CFDFKSA1 can be used as a switch, allowing electric current to flow only when it is ON. Since its gate voltage is an input control signal, the SPW20N60CFDFKSA1 can be used to control the movement of electric current, making it an essential component in electronic circuits.
Conclusion
In conclusion, the SPW20N60CFDFKSA1 is a high-speed power MOSFET that is suitable for a wide range of applications, such as power conversion, lighting, motor control, audio, and consumer electronics applications. Its low on-state resistance and very fast switching speeds make it the perfect choice for applications requiring fast control and high power. The working principle of the SPW20N60CFDFKSA1 is based on the use of an insulated gate to create a conducting channel between the source and drain regions, which is then turned ON or OFF using a control signal. The SPW20N60CFDFKSA1 is essential in electronic circuits that require reliable control of electric current.
The specific data is subject to PDF, and the above content is for reference
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