| Allicdata Part #: | SPW21N50C3FKSA1-ND |
| Manufacturer Part#: |
SPW21N50C3FKSA1 |
| Price: | $ 3.75 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 560V 21A TO-247 |
| More Detail: | N-Channel 560V 21A (Tc) 208W (Tc) Through Hole PG-... |
| DataSheet: |  SPW21N50C3FKSA1 Datasheet/PDF |
| Quantity: | 447 |
| 1 +: | $ 3.40200 |
| 10 +: | $ 3.03975 |
| 240 +: | $ 2.49236 |
| 720 +: | $ 2.01820 |
| 1200 +: | $ 1.70210 |
| Series: | CoolMOS™ |
| Packaging: | Tube |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 560V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 13.1A, 10V |
| Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 208W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO247-3 |
| Package / Case: | TO-247-3 |
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The SPW21N50C3FKSA1 is a single N-channel power MOSFET developed by STMicroelectronics. It is part of the STripFET series of power MOSFETs, designed specifically to address the needs of the commercial appliance, industrial, and automotive markets. These MOSFETs provide excellent drain-source avalanche capability, low on-resistance, and very high breakdown voltage compared to other type of power components. In addition, they also offer a wide bandwidth and dynamic operation.
The SPW21N50C3FKSA1 offers a wide range of applications where high speed switching and voltage regulation is required. It is commonly used in power management applications such as solar array MAX, DC/DC converters, and motor control. The device is also suitable for switching applications in the audio, optical and communication industries. It can also be used in automotive systems where both high efficiency and low EMI are critical.
The working principle of the SPW21N50C3FKSA1, like any other power MOSFET, is based on the bias applied to its gate terminal. When it is turned off, the gate-to-source voltage, or Vgs, is zero. However, when it is turned on, the gate-to-source voltage increases and this causes a channel to form between the source and drain of the MOSFET. This channel is a current path and when a drain-to-source voltage, or Vds, is applied, electrons will flow through this channel, generating a current. The energy loss of the MOSFET is determined by how much resistance exists in the channel. The lower the resistance in the channel, the lower the losses.
The SPW21N50C3FKSA1 is a versatile and reliable power MOSFET ideal for use in a variety of applications. It is robust, provides high current carrying capability and offers excellent switching speed and low on-resistance. With these features, the SPW21N50C3FKSA1 is a great choice for use in high power systems where high switching speed and low power losses are critical.
The specific data is subject to PDF, and the above content is for reference
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