
Allicdata Part #: | SQ2308CES-T1_GE3TR-ND |
Manufacturer Part#: |
SQ2308CES-T1_GE3 |
Price: | $ 0.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 2.3A |
More Detail: | N-Channel 60V 2.3A (Tc) 2W (Tc) Surface Mount SOT-... |
DataSheet: | ![]() |
Quantity: | 12000 |
1 +: | $ 0.58000 |
10 +: | $ 0.56260 |
100 +: | $ 0.55100 |
1000 +: | $ 0.53940 |
10000 +: | $ 0.52200 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 205pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.3nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SQ2308CES-T1_GE3 is a type of FET (Field Effect Transistor) and MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor) that belongs to the single type FETs. The SQ2308CES-T1_GE3 is a highly efficient and advanced transistor with a wide range of applications.
The SQ2308CES-T1_GE3 utilizes a high performance N-Channel Cool-MOS (CMOS) depletion mode switch that is designed to switch on and off with a single use. It is a high-performance transverse device with virtually no leakage currents and high frequency switching. It uses a high-density dual-layer MOSFET architecture and is capable of very high speed switching in the range of several hundred megahertz. This is achieved due to the shorter switching times.
The SQ2308CES-T1_GE3 is designed to operate at a maximum voltage of 85 volts and a maximum current of 60A. The device features a neat thermal balance, combining both static and dynamic thermal performance. It is also fully protected from short circuit, overtemperature and current surge. The device also features self-healing properties which allow it to ensure a lower switching stress and longer life cycle.
The SQ2308CES-T1_GE3 is mainly used for voltage and current monitoring applications such as power supplies, battery charge and discharge control, motor drivers, engine management systems and heater control. The device can be used in many other applications such as solar panel controllers, HVAC systems, low voltage systems, flow control, pressure control and many sensing applications.
The working principle of the SQ2308CES-T1_GE3 is based on the switching property of an N-Channel MOSFET. When a positive voltage is applied to the gate of the device, it will turn on and allow current to flow from the drain. When the gate voltage is removed, the device will turn off, preventing current from flowing. This is the basic principle of FET switching. The device is able to switch at very high speeds due to its low gate charge and low gate resistance. The device can be used in a variety of applications including power control, motor control, voltage regulation, and sensing.
The SQ2308CES-T1_GE3 is a highly advanced and efficient device with a wide range of applications in the energy and industrial sectors. The device offers a great deal of efficiency, high switching speeds, and protection from electrical and thermal damage. It is an ideal solution for applications that require precise control of current and voltage.
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