SQ2308CES-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQ2308CES-T1_GE3TR-ND

Manufacturer Part#:

SQ2308CES-T1_GE3

Price: $ 0.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 2.3A
More Detail: N-Channel 60V 2.3A (Tc) 2W (Tc) Surface Mount SOT-...
DataSheet: SQ2308CES-T1_GE3 datasheetSQ2308CES-T1_GE3 Datasheet/PDF
Quantity: 12000
1 +: $ 0.58000
10 +: $ 0.56260
100 +: $ 0.55100
1000 +: $ 0.53940
10000 +: $ 0.52200
Stock 12000Can Ship Immediately
$ 0.58
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SQ2308CES-T1_GE3 is a type of FET (Field Effect Transistor) and MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor) that belongs to the single type FETs. The SQ2308CES-T1_GE3 is a highly efficient and advanced transistor with a wide range of applications.

The SQ2308CES-T1_GE3 utilizes a high performance N-Channel Cool-MOS (CMOS) depletion mode switch that is designed to switch on and off with a single use. It is a high-performance transverse device with virtually no leakage currents and high frequency switching. It uses a high-density dual-layer MOSFET architecture and is capable of very high speed switching in the range of several hundred megahertz. This is achieved due to the shorter switching times.

The SQ2308CES-T1_GE3 is designed to operate at a maximum voltage of 85 volts and a maximum current of 60A. The device features a neat thermal balance, combining both static and dynamic thermal performance. It is also fully protected from short circuit, overtemperature and current surge. The device also features self-healing properties which allow it to ensure a lower switching stress and longer life cycle.

The SQ2308CES-T1_GE3 is mainly used for voltage and current monitoring applications such as power supplies, battery charge and discharge control, motor drivers, engine management systems and heater control. The device can be used in many other applications such as solar panel controllers, HVAC systems, low voltage systems, flow control, pressure control and many sensing applications.

The working principle of the SQ2308CES-T1_GE3 is based on the switching property of an N-Channel MOSFET. When a positive voltage is applied to the gate of the device, it will turn on and allow current to flow from the drain. When the gate voltage is removed, the device will turn off, preventing current from flowing. This is the basic principle of FET switching. The device is able to switch at very high speeds due to its low gate charge and low gate resistance. The device can be used in a variety of applications including power control, motor control, voltage regulation, and sensing.

The SQ2308CES-T1_GE3 is a highly advanced and efficient device with a wide range of applications in the energy and industrial sectors. The device offers a great deal of efficiency, high switching speeds, and protection from electrical and thermal damage. It is an ideal solution for applications that require precise control of current and voltage.

The specific data is subject to PDF, and the above content is for reference

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