SQ2361EES-T1-GE3

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The SQ2361EES-T1-GE3 is an N-Channel Power MOSFET developed and manufactured by Lite-On Semiconductor, with features including a drain current of up to 20A, a drain source voltage up to 30V and an RDS(on) of 3.5 mΩ. This silicon MOSFET is suitable for use in a wide range of applications such as high issue current switching and DC-DC conversion. It also reduces switching noise and switching losses, making it an ideal choice for designers. Its ultra low on-resistance and low capacitance levels ensure fast switching and low power consumption.

The SQ2361EES-T1-GE3 is a N-Channel MOSFET, specifically designed for medium power applications. It functions as a voltage-controlled switch that can be used to control the current flowing in the circuit. The SQ2361EES-T1-GE3 has a gate-source voltage ranging from -5V to 30V. The voltage applied to the gate effectively controls the conductive state of the MOSFET, in which the current flowing through the drain and source is either completely blocked or allowed to flow through. As the thickness of the oxide layer at the gate-channel interface depends on the voltage applied, the electrical resistance of the channel is dependent on the gate-source voltage.

The SQ2361EES-T1-GE3 offers several advantages over conventional discrete bipolar transistors. It has a higher current passing capability compared to bipolar transistors, allowing for more control and higher switching speeds, as well as a better linearity. With a low-on resistance of 3.5 mOhm, it can provide more efficient power conversion. A higher voltage, up to 30V, can be applied to the drain, making it suitable for power management applications. It has a lower power consumption compared to discrete transistors, and its low capacitance levels improve switching performance and reduce EMI noise.

The SQ2361EES-T1-GE3 is a popular choice for various applications, such as in motor control, audio equipment, power supplies, and other high-reliability applications. It is suitable for applications requiring low gate charge and low gate-source leakage. This MOSFET is also used as a high growth vertical DMOSFET and is often used in switching applications. In addition, its low capacitance makes it well-suited for high frequency applications. Other applications of the SQ2361EES-T1-GE3 include DC-DC converters, power switches, and load switches.

The SQ2361EES-T1-GE3 is an easy-to-use device that can satisfy the needs of both hobbyists and professional designers. With its low on-resistance and low capacitance, it ensures optimum power transmission, fast switching, and low EMI noise. It is also environmentally friendly and RoHS compliant, making it a versatile and high-performance choice for various applications. For high-reliability applications, the SQ2361EES-T1-GE3 is a suitable MOSFET that can satisfy the demands of applications with higher current ratings.

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