SQ2337ES-T1_GE3

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The SQ2337ES-T1_GE3 (E-FET) is a discrete n-channel enhancement-mode silicon-gate MOS field-effect transistor (MOSFET). This device is suitable for use in digital and analog switching circuits, as well as in many power-management applications during standby or full-on conditions.

The SQ2337ES-T1_GE3 works by controlling the amount of current that flows between the source and drain terminals. When the voltage between the gate and source terminals is negative, the E-FET acts as an Insulated-Gate Field-Effect Transistor (IGFET), in which the gate-source voltage controls the current flow between the source and drain terminals. When the voltage between the gate and source terminals is positive, the E-FET acts as a Symmetrical-Gate Field-Effect Transistor (SGFET), in which the current is controlled by both the gate-source voltage and the gate-drain voltage, giving the device its unique characteristics.

The E-FET can be used in a variety of applications, ranging from low-voltage switch-mode power supplies, digital video, and audio switching circuits, monitoring of system health, and low-level control of current flow. The E-FET is especially well suited for use in digital power management applications, where it can provide tight control of switch timing and stable behavior over wide temperature ranges. Typical applications include power supply protection, low-level switching, and load protection. In low-power applications, the SQ2337ES-T1_GE3 can be used as a digital switch, power switch, or signal switch, providing efficient, reliable control in a wide range of systems.

The SQ2337ES-T1_GE3 is optimized for low on-resistance and low gate charge, while also providing high maximum breakdown voltage, wide temperature range, fast switching and high power dissipation. It has an exceptionally low gate charge of less than 1nC and an on-resistance of less than 0.003Ω across the entire temperature range of -40°C to +125°C. The SQ2337ES-T1_GE3’s low gate charge and small junction capacitances provide fast switching times, with a maximum gate rise time of 0.75ns and a maximum gate fall time of 0.4ns.

The SQ2337ES-T1_GE3 is typically used in low voltage switch-mode power supplies (SMPSs), as well as digital video, audio, and monitoring applications. It is also well suited for use in applications such as power supply protection, power switches, signal switches, and load protection. The SQ2337ES-T1_GE3 is an ideal choice for applications requiring high current capability and high voltage in a small package.

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