SQ2398ES-T1_GE3 Discrete Semiconductor Products

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The SQ2398ES-T1_GE3 is a high-temperature single N-channel enhancement-mode Power MOSFET from Intersil. Its main application field is power switching, DC motor control and lighting. The device is designed for the extremely low on-resistance and low gate charge due to an optimal design of the Vertical DMOS process. It can be used in battery charging systems, programmable motor speed, solar panel control and other equipment that requires efficient and reliable power MOSFET.

The working principle of the SQ2398ES-T1_GE3 is to utilize a voltage applied to its electrical gate for controlling the conduction of current between its source and drain. It determines the on-characteristic of the device, hence the output voltage and current when the device is in the on-state condition. The voltage should be greater than the threshold voltage Vth, which is the limit between device off-state and on-state. The on-state can be considered as a transistor switch in its ON condition, where the input signal applied to its gate terminal creates a conductive channel between its source and drain, allowing the current to flow freely between the anode and cathode. This current flow can be regulated by adjusting the amount of voltage applied to gate of the MOSFET.

The on-resistance of the MOSFET is determined by its R_dson parameter. It is the resistance level of the device when it is in its on-state, and it heavily relies on the gate voltage and drain-to-source current. R_dson improves with increasing drain-to-source voltage along with an increase of the gate voltage. The higher gate voltage creates a larger conductive area between the source and drain, reducing the on-resistance of the MOSFET.

Aside from the low on-resistance, the SQ2398ES-T1_GE3 also features low gate charge due to its unique vertical DMOS design process. This enables the device to switch faster and reduce switching losses, improving overall the efficiency of the MOSFET. Furthermore, the device has a high power dissipation of 30W and a low thermal resistance of 3.8°C/W, making it suitable for high-power applications.

The SQ2398ES-T1_GE3 is part of Intersil’s family of power MOSFETs designed for robust efficiency, reliability, and long operational life. It has applications in various fields, from motor control and solar panel control to other energy-efficient systems requiring the use of a power MOSFET. The device offers excellent thermal management through its low-thermal resistance, and its high power dissipation and low on-resistance ensure fast and reliable switching.

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