SQ2361ES-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQ2361ES-T1_GE3TR-ND

Manufacturer Part#:

SQ2361ES-T1_GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 2.5A SSOT23
More Detail: P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount
DataSheet: SQ2361ES-T1_GE3 datasheetSQ2361ES-T1_GE3 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 177 mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQ2361ES-T1_GE3 is a single N-channel FET (Field-effect Transistor) designed for high current switching applications. It is suitable for industrial, domestic and automotive applications, and offers excellent performance characteristics. The FET is a three-terminal device with a source, a drain and a gate. It can be used to either switch the current on or off, depending on the voltage applied to the gate.

The FET’s main application is to provide a high-current switching capability in applications such as switching power supplies, DC-DC converters, motor drives, and inverters. It is also used in power amplifiers, and is also used in other applications such as signal conditioning and signal processing. The FET offers excellent thermal performance, and is capable of operating under extreme conditions such as high temperatures, vibration and shock.

The working principle of the SQ2361ES-T1_GE3 is based on the principle of electric field effect. When a voltage is applied to the gate, it creates an electric field which varies the resistance between the source and the drain. When the gate voltage is low, the FET acts as an open switch, meaning it is off and no current is flowing through the device. When the gate voltage is high, the FET acts as a closed switch, and current will flow through the device.

The SQ2361ES-T1_GE3 has several advantages over other types of switching devices. Firstly, it has a very low switching threshold, meaning that it can switch quickly and accurately at low gate voltages. It also has a low gate capacitance, meaning that it does not suffer from signal bounce and ringing when subjected to rapidly changing gate voltages. Finally, the FET has a very low on-state resistance, meaning that it can carry significant amounts of current with very little resistance, making it highly efficient.

In summary, the SQ2361ES-T1_GE3 is an ideal device for high current switching applications, due to its excellent performance characteristics and low switching threshold. It is suitable for a wide range of applications, including industrial, domestic and automotive applications, and is capable of operating under extreme conditions. Its working principle is based on electric field effect, and it is highly efficient due to its low on-state resistance.

The specific data is subject to PDF, and the above content is for reference

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