Allicdata Part #: | SQ2361ES-T1_GE3TR-ND |
Manufacturer Part#: |
SQ2361ES-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 2.5A SSOT23 |
More Detail: | P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount |
DataSheet: | SQ2361ES-T1_GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 177 mOhm @ 2.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQ2361ES-T1_GE3 is a single N-channel FET (Field-effect Transistor) designed for high current switching applications. It is suitable for industrial, domestic and automotive applications, and offers excellent performance characteristics. The FET is a three-terminal device with a source, a drain and a gate. It can be used to either switch the current on or off, depending on the voltage applied to the gate.
The FET’s main application is to provide a high-current switching capability in applications such as switching power supplies, DC-DC converters, motor drives, and inverters. It is also used in power amplifiers, and is also used in other applications such as signal conditioning and signal processing. The FET offers excellent thermal performance, and is capable of operating under extreme conditions such as high temperatures, vibration and shock.
The working principle of the SQ2361ES-T1_GE3 is based on the principle of electric field effect. When a voltage is applied to the gate, it creates an electric field which varies the resistance between the source and the drain. When the gate voltage is low, the FET acts as an open switch, meaning it is off and no current is flowing through the device. When the gate voltage is high, the FET acts as a closed switch, and current will flow through the device.
The SQ2361ES-T1_GE3 has several advantages over other types of switching devices. Firstly, it has a very low switching threshold, meaning that it can switch quickly and accurately at low gate voltages. It also has a low gate capacitance, meaning that it does not suffer from signal bounce and ringing when subjected to rapidly changing gate voltages. Finally, the FET has a very low on-state resistance, meaning that it can carry significant amounts of current with very little resistance, making it highly efficient.
In summary, the SQ2361ES-T1_GE3 is an ideal device for high current switching applications, due to its excellent performance characteristics and low switching threshold. It is suitable for a wide range of applications, including industrial, domestic and automotive applications, and is capable of operating under extreme conditions. Its working principle is based on electric field effect, and it is highly efficient due to its low on-state resistance.
The specific data is subject to PDF, and the above content is for reference
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