
Allicdata Part #: | SQ2360EES-T1-GE3CT-ND |
Manufacturer Part#: |
SQ2360EES-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 4.4A TO236 |
More Detail: | N-Channel 60V 4.4A (Tc) 3W (Tc) Surface Mount SOT-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQ2360EE-T1-GE3 is a successful self-developed transistor developed by the company, a world-renowned semiconductor products manufacturer. It is a novel MOSFET transistor that uses an advanced micro-electronics technology and hardware design, which has been optimized for high-speed performance and excellent reliability. This provides the customer with the highest efficiency and stability.
The SQ2360EE-T1-GE3 is mainly used in the ultra-high speed switching applications of acoustics, power control, data, and communication systems. It is a high-efficiency, low-power MOSFET which is suitable for a wide range of operating frequencies, from 1 MHz to 500 MHz. This unique characteristic of the transistor makes it especially suitable for ultra-high speed switching applications.
The SQ2360EE-T1-GE3 has a built-in 2-speed glitch-free MOSFET technology that guarantees low switching losses and over-current protection. The transistor also incorporates an increased voltage rating and a wide breakdown voltage range that offers excellent reliability and withstands high electrical noise and stress. It is also available in a RoHS compliant form that allows the end user to benefit from the environment friendly nature of the product.
The working principle of the SQ2360EE-T1-GE3 MOSFET transistor relies on its unique construction technology, which utilizes a semiconductor layer between the drain and source. This layer acts as a conductor when a positive voltage is applied to the gate and acts as an insulator when a negative voltage is applied. This allows the transistor to control the flow of current from the source to the drain with higher efficiency and faster response time than other similar transistors.
The SQ2360EE-T1-GE3 offers unparalleled performance in the ultra-high speed switching applications, with a low-power operation, high-speed switching, and excellent reliability. Its 2-speed glitch-free MOSFET technology makes it especially suitable for ultra-high frequency switching applications and provides a low-power consumption and increased voltage rating. Additionally, its environmental friendly design ensures that the end user can benefit from its long-term sustainability and efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQ2303P12NF | Laird Techno... | 0.0 $ | 1000 | ANT OMNI SQUINT PNL N FEM... |
SQ2355 | Klein Tools,... | 0.0 $ | 1000 | BIT POWER SQUARE #2 3.5" |
SQ2301ES-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 3.9A TO23... |
SQ2398ES-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.6A SOT... |
SQ2389ES-T1_GE3 | Vishay Silic... | -- | 12000 | MOSFET P-CHAN 40V SO23P-C... |
SQ2303P36RTN | Laird Techno... | 0.0 $ | 1000 | ANT OMNI SQUINT PNL RP TN... |
SQ2361AEES-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 2.5A SSOT... |
SQ2310ES-T1_GE3 | Vishay Silic... | -- | 75000 | MOSFET N-CH 20V 6A SOT23N... |
SQ2315ES-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CHAN 12V SOT23P-... |
SQ2348ES-T1_GE3 | Vishay Silic... | -- | 9000 | MOSFET N-CH 30V 8A SOT-23... |
SQ2319ES-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 4.6A TO-2... |
SQ2303P-203NM | Laird Techno... | 40.93 $ | 1000 | PNL ANT SQUINT OMNI N MAL... |
SQ2360EES-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 4.4A TO23... |
SQ2337ES-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CHAN 80V SOT23P-... |
SQ2351ES-T1_GE3 | Vishay Silic... | -- | 21000 | MOSFET P-CHAN 20V SOT23P-... |
SQ2362ES-T1_GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 60V 4.4A TO23... |
SQ2361ES-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 60V 2.5A SSOT... |
SQ2308CES-T1_GE3 | Vishay Silic... | -- | 12000 | MOSFET N-CH 60V 2.3AN-Cha... |
SQ2303P36RSM | Laird Techno... | 0.0 $ | 1000 | ANT OMNI SQUINT PNL RP SM... |
SQ2303PNF | Laird Techno... | 0.0 $ | 1000 | ANT OMNI SQUINT PNL N FEM... |
SQ2325ES-T1_GE3 | Vishay Silic... | 0.18 $ | 6000 | MOSFET P-CH 150V 840MA TO... |
SQ2303P72RTN | Laird Techno... | 0.0 $ | 1000 | ANT OMNI SQUINT PNL RP TN... |
SQ2319ADS-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 40V 4.6A SOT2... |
SQ2364EES-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 60V SOT-23N... |
SQ2318AES-T1_GE3 | Vishay Silic... | 0.13 $ | 3000 | MOSFET N-CHAN 40V SOT23N-... |
SQ2361EES-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 2.5A SOT2... |
SQ2303ES-T1_GE3 | Vishay Silic... | -- | 45000 | MOSFET P-CHAN 30V SOT23P-... |
SQ2309ES-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CHAN 60V SOT23P-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
