SQ2360EES-T1-GE3 Allicdata Electronics
Allicdata Part #:

SQ2360EES-T1-GE3CT-ND

Manufacturer Part#:

SQ2360EES-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 4.4A TO236
More Detail: N-Channel 60V 4.4A (Tc) 3W (Tc) Surface Mount SOT-...
DataSheet: SQ2360EES-T1-GE3 datasheetSQ2360EES-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 85 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The SQ2360EE-T1-GE3 is a successful self-developed transistor developed by the company, a world-renowned semiconductor products manufacturer. It is a novel MOSFET transistor that uses an advanced micro-electronics technology and hardware design, which has been optimized for high-speed performance and excellent reliability. This provides the customer with the highest efficiency and stability.

The SQ2360EE-T1-GE3 is mainly used in the ultra-high speed switching applications of acoustics, power control, data, and communication systems. It is a high-efficiency, low-power MOSFET which is suitable for a wide range of operating frequencies, from 1 MHz to 500 MHz. This unique characteristic of the transistor makes it especially suitable for ultra-high speed switching applications.

The SQ2360EE-T1-GE3 has a built-in 2-speed glitch-free MOSFET technology that guarantees low switching losses and over-current protection. The transistor also incorporates an increased voltage rating and a wide breakdown voltage range that offers excellent reliability and withstands high electrical noise and stress. It is also available in a RoHS compliant form that allows the end user to benefit from the environment friendly nature of the product.

The working principle of the SQ2360EE-T1-GE3 MOSFET transistor relies on its unique construction technology, which utilizes a semiconductor layer between the drain and source. This layer acts as a conductor when a positive voltage is applied to the gate and acts as an insulator when a negative voltage is applied. This allows the transistor to control the flow of current from the source to the drain with higher efficiency and faster response time than other similar transistors.

The SQ2360EE-T1-GE3 offers unparalleled performance in the ultra-high speed switching applications, with a low-power operation, high-speed switching, and excellent reliability. Its 2-speed glitch-free MOSFET technology makes it especially suitable for ultra-high frequency switching applications and provides a low-power consumption and increased voltage rating. Additionally, its environmental friendly design ensures that the end user can benefit from its long-term sustainability and efficiency.

The specific data is subject to PDF, and the above content is for reference

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