SQ2310ES-T1_GE3

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	485pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	8.5nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	30 mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The SQ2310ES-T1_GE3 is a small-signal N-channel MOSFET commonly used for various power management applications. This device is designed for low voltage and high frequency operation and is often used in audio applications for its low noise characteristics. This article will cover the application fields of the SQ2310ES-T1_GE3, as well as its working principle.

Application Fields

The SQ2310ES-T1_GE3 is a versatile MOSFET which is ideal for a variety of power management applications. Its low on-resistance makes it suitable for use in low-side switches and high-side switches, allowing it to be used in power supplies and battery management systems. Additionally, its relatively low capacitance and low gate charge make it suitable for switching applications at high frequencies, making it an ideal choice for use in audio amplifiers and other audio applications where low noise is critical.The SQ2310ES-T1_GE3 also has a wide range of operating temperature and supply voltage, making it an excellent choice for automotive and other temperature-sensitive applications. Its small size makes it easier to implement, making it an ideal choice for space-constrained and high-density designs.

Working Principle

The SQ2310ES-T1_GE3 is an N-channel enhancement mode MOSFET, which means that the current limiting action occurs at the gate. When the gate is given a positive voltage relative to the source, the gate-to-channel diode will allow current to flow, turning on the MOSFET and allowing current to flow from source to drain. Conversely, when the gate is given a negative voltage relative to the source, the gate-to-channel diode will reverse bias and the MOSFET will be turned off, blocking any current flow between source and drain.This MOSFET is designed for low voltage and high frequency operation, which makes it ideal for switching and audio applications. Its relatively low capacitance and gate charge reduce noise and improve efficiency in high frequency applications, while its low on-resistance and wide operating temperature range make it an ideal choice for power management applications.

Conclusion

The SQ2310ES-T1_GE3 is a small signal N-channel MOSFET which is suitable for a variety of power management and high frequency applications. Its low on-resistance and wide operating temperature range make it suitable for power management applications, while its relatively low capacitance and gate charge make it suitable for military, automotive and audio applications. Its small size facilitates its implementation in space-constrained and high-density designs, making it a valuable component in today’s ever-shrinking electronics designs.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description