Allicdata Part #: | SQD40081EL_GE3TR-ND |
Manufacturer Part#: |
SQD40081EL_GE3 |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CHAN 40V TO252 |
More Detail: | P-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-2... |
DataSheet: | SQD40081EL_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.36413 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9950pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQD40081EL_GE3 is a high-performance advanced single N-channel MOSFET. It has a maximum drain-source voltage of 80V and a maximum drain-source resistance of 0.8 Ohm. The device is designed to operate up to a maximum drain current of 40A and is ideal for battery powered systems. The MOSFET is specifically suitable for applications such as battery chargers and systems with high peak loads.
The MOSFET is designed to provide improved efficiency and power density through its low on-resistance and fast switching. It operates at a lower gate-source voltage (Vgs) with a minimum of 12V at 25°C. The MOSFET is specified to operate as a class C power MOSFET and can be used as a replacement for discrete components.
The SQD40081EL_GE3 works on the principle of metal-oxide semiconductor field effect transistors (MOSFET). The MOSFET acts as a voltage-controlled switch and has three terminals; the source terminal, the drain terminal, and the gate terminal. When a voltage is applied to the gate terminal, it controls the amount of current passing through the channel that connects the source and drain terminals. The MOSFET has low input capacitance and high frequency characteristics. This allows the MOSFET to be used in high frequency applications such as RF amplifiers and switching regulators.
The SQD40081EL_GE3 has a wide range of applications such as DC/DC converters and power supplies, HVAC compressors, automotive chargers, lighting controllers, and medical instrumentation. It can also be used in other power switching applications such as thyristors, rectifiers, and induction heateres.
The SQD40081EL_GE3 can be used in high-power applications with high voltage and load current ratings. It can also be used in low-voltage and high-current loads and in circuits with low gate-drive supply voltages. The device is designed to operate at high temperatures up to 175°C and can be used in applications with humidity or very hot environments such as automotive applications.
The SQD40081EL_GE3 is an ideal device for power management and power switching applications. It has the ability to provide high performance, low on-resistance, and fast switching, allowing it to serve as an efficient replacement for discrete components. The MOSFET is specifically designed to improve efficiency and power density for battery powered systems, HVAC compressors, and other switching applications.
The specific data is subject to PDF, and the above content is for reference
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